BCP56-16 STMicroelectronics, BCP56-16 Datasheet - Page 4

• Manufacturer Part Number: BCP56-16
• Description: TRANS NPN LOW POWER SOT-223
• Manufacturer: STMicroelectronics

Specifications of BCP56-16

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6962-2

Electrical characteristics
2
4/9
(T
Table 3.
Note (2) Pulsed duration = 300 µs, duty cycle ≤1.5%
V
Electrical characteristics
V
V
V
case
V
(BR)CEO
Symbol
CE(sat)
BE(on)
h
(BR)CBO
(BR)EBO
I
FE
CBO
= 25°C unless otherwise specified)
(2)
(2)
(2)
(2)
Electrical characteristics
Collector cut-off current
(I
Collector-emitter
breakdown voltage
(I
Collector-base
breakdown voltage
(I
Emitter-base breakdown
voltage (I
Collector-emitter
saturation voltage
Base-emitter on voltage
DC current gain
E
B
E
=0)
=0)
=0)
Parameter
C
=0)
V
V
I
I
I
I
I
I
I
I
C
C
E
C
C
C
C
C
CB
CB
= 20mA
= 100µA
= 10µA
= 500mA
= 500mA
= 5mA
= 150mA
= 500mA
= 30V
= 30V;
Test Conditions
T
I
V
V
V
V
j
B
= 125°C
CE
CE
CE
CE
= 50mA
= 2V
= 2V
= 2V
= 2V
Min.
100
100
80
40
25
5
Typ.
Max.
100
250
0.5
10
1
BCP56-16
Unit
µA
nA
V
V
V
V
V