BCP 49 H6359 Infineon Technologies, BCP 49 H6359 Datasheet

BCP 49 H6359

Manufacturer Part Number

BCP 49 H6359

Description

TRANS NPN DARL 60V 500MA SOT223

Manufacturer

Infineon Technologies

Datasheet

1.BCP_49_E6327.pdf (7 pages)

Specifications of BCP 49 H6359

Transistor Type

NPN - Darlington

Current - Collector (ic) (max)

500mA

Voltage - Collector Emitter Breakdown (max)

60V

Vce Saturation (max) @ Ib, Ic

1V @ 100µA, 100mA

Dc Current Gain (hfe) (min) @ Ic, Vce

10000 @ 100mA, 5V

Power - Max

1.5W

Frequency - Transition

200MHz

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Current page: 1 of 7
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NPN Silicon Darlington Transistors

Type

BCP49

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

DC collector current

Peak collector current

Base current

Peak base current

Total power dissipation, T

Junction temperature

Storage temperature

Thermal Resistance

Junction - soldering point

1 Pb-containing package may be available upon special request

2 For calculation of R

Pb-free (RoHS compliant) package

For general AF applications

High collector current

High current gain

Qualified according AEC Q101

thJA

please refer to Application Note Thermal Resistance

Marking

BCP 49

= 124 °C

1 = B

Symbol

stg

CEO

CBO

EBO

tot

thJS

Pin Configuration

2 = C

3 = E

-65 ... 150

Values

4 = C

800

100

200

B(1)

500

150

1.5

E(3)

Package

SOT223

EHA00009

2007-04-27

C(2,4)

BCP49

Unit

°C

K/W

Related parts for BCP 49 H6359

BCP 49 H6359 Summary of contents

Page 1

NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking BCP49 BCP 49 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage I = 100 µ Emitter-base breakdown voltage µ ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter saturation voltage1 100 mA 0 Base-emitter saturation voltage 100 mA 0 Characteristics Transition frequency I = ...

Page 4

Total power dissipation P 1650 mW 1350 1200 1050 900 750 600 450 300 150 Transition frequency BCP 29/ MHz ...

Page 5

DC current gain BCP 29/ 125 ˚ ˚C 5 -55 ˚ Collector-base ...

Page 6

Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. ...

Page 7

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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