2SC5712(TE12L,F) Toshiba, 2SC5712(TE12L,F) Datasheet
2SC5712(TE12L,F)
Specifications of 2SC5712(TE12L,F)
Related parts for 2SC5712(TE12L,F)
2SC5712(TE12L,F) Summary of contents
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... TOSHIBA Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications DC-AC Converter Applications • High DC current gain 400 to 1000 (I FE • Low collector-emitter saturation voltage: V • High-speed switching 120 ns (typ.) f (Ta = 25°C) Maximum Ratings Characteristics Collector-base voltage Collector-emitter voltage ...
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Input Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart Marking Output Lot No. 2 2SC5712 Part No. (or abbreviation code) A ...
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I – Common emitter Ta = 25°C Single nonrepetitive pulse 0.2 0.4 0.6 0.8 Collector-emitter voltage V ...
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Safe Operating Area max (pulsed) ♦ 100 µs♦ 10 ms♦ 1 ms♦ 10 µs♦ max (continuous) 10 s♦* 100 ms♦ operation * (Ta = 25°C) ♦: Single ...
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... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...