BC337-25RL1G ON Semiconductor, BC337-25RL1G Datasheet - Page 2

TRANS NPN GP 45V 800MA TO-92

BC337-25RL1G

Manufacturer Part Number
BC337-25RL1G
Description
TRANS NPN GP 45V 800MA TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC337-25RL1G

Transistor Type
NPN
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 100mA, 1V
Power - Max
625mW
Frequency - Transition
210MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.8 A
Maximum Dc Collector Current
0.8 A
Power Dissipation
625 mW
Maximum Operating Frequency
210 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
160 at 100 mA at 1 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC337-25RL1G
Manufacturer:
ON Semiconductor
Quantity:
33 945
Part Number:
BC337-25RL1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Part Number:
BC337-25RL1G
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Base−Emitter On Voltage
Collector −Emitter Saturation Voltage
Output Capacitance
Current −Gain − Bandwidth Product
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(V
(I
0.001
C
C
E
C
C
C
C
C
CB
CE
EB
CB
= 10 mA, I
= 10 mA, I
= 100 mA, I
= 100 mA, V
= 300 mA, V
= 300 mA, V
= 500 mA, I
= 10 mA, V
0.02
0.05
= 30 V, I
= 45 V, V
= 4.0 V, I
= 10 V, I
0.002
0.01
D = 0.5
0.2
0.1
C
B
E
E
E
C
BE
CE
= 0)
B
SINGLE PULSE
= 0)
= 0)
= 0, f = 1.0 MHz)
CE
CE
CE
= 0)
= 0)
= 50 mA)
= 0)
= 5.0 V, f = 100 MHz)
0.005
= 1.0 V)
= 1.0 V)
= 1.0 V)
SINGLE PULSE
Characteristic
0.01
0.02
(T
A
= 25°C unless otherwise noted)
0.05
Figure 1. Thermal Response
http://onsemi.com
0.1
t, TIME (SECONDS)
BC337−25
BC337−40
0.2
2
BC337
P
(pk)
DUTY CYCLE, D = t
0.5
V
V
V
Symbol
V
V
(BR)CEO
(BR)CES
(BR)EBO
CE(sat)
t
I
I
I
BE(on)
C
1
CBO
h
CES
EBO
f
1.0
FE
ob
T
t
2
2.0
1
/t
2
Min
100
160
250
5.0
45
50
60
5.0
q
q
q
q
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
JC
JC
JA
JA
J(pk)
Typ
210
15
10
(t) = (t) q
(t) = r(t) q
= 375°C/W MAX
= 100°C/W MAX
− T
C
20
= P
JC
JA
Max
100
100
100
630
400
630
1.2
0.7
(pk)
1
q
JC
50
(t)
nAdc
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
100

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