BC337-25RL1G ON Semiconductor, BC337-25RL1G Datasheet - Page 3

• Manufacturer Part Number: BC337-25RL1G
• Description: TRANS NPN GP 45V 800MA TO-92
• Manufacturer: ON Semiconductor

Specifications of BC337-25RL1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 210MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.8 A
• Maximum Dc Collector Current: 0.8 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 210 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
1.0
0.8
0.6
0.4
0.2
10
+1
-1
-2
0
0
0.01
1.0
1
Figure 2. Active Region − Safe Operating Area
T
J
= 25°C
I
(APPLIES BELOW RATED V
C
= 10 mA
Figure 6. Temperature Coefficients
q
T
VC
A
V
3.0
Figure 4. Saturation Region
= 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CE
for V
0.1
I
, COLLECTOR-EMITTER VOLTAGE
C
dc
, COLLECTOR CURRENT (mA)
CE(sat)
q
I
VB
10
B
, BASE CURRENT (mA)
100 mA
for V
1.0 s
BE
T
dc
10
C
1
300 mA
CEO
= 25°C
1.0 ms
)
100
30
10
500 mA
100 ms
T
T
J
J
= 135°C
= 135°C
http://onsemi.com
1000
100
100
3
1000
100
100
10
1.0
0.8
0.6
0.4
0.2
10
0
1
0.1
0.1
1
V
T
J
CE
T
= 25°C
A
= 1 V
= 25°C
1.0
Figure 3. DC Current Gain
I
V
Figure 5. “On” Voltages
C
I
Figure 7. Capacitances
C
R
, COLLECTOR CURRENT (MA)
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
10
1
V
CE(sat)
V
BE(sat)
10
@ I
@ I
C
V
/I
C
BE(on)
C
B
/I
ib
B
= 10
100
10
= 10
@ V
100
CE
= 1 V
C
ob
1000
1000
100