MPS751ZL1G ON Semiconductor, MPS751ZL1G Datasheet - Page 3

• Manufacturer Part Number: MPS751ZL1G
• Description: TRANSISTOR PNP GP 2A 60V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPS751ZL1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 1A, 2V
• Power - Max: 625mW
• Frequency - Transition: 75MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

0.05
0.02
0.01
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
4.0
2.0
1.0
0.5
0.2
0.1
10
0
0
0.05
1.0
50
0.1 0.2
I
C
T
A
= 10 mA I
2.0
= 25°C
V
CE
Figure 7. MPS650, MPS651 SOA,
100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Collector Saturation Region
Figure 5. MPS650, MPS651
Figure 3. MPS650, MPS651
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.5 1.0 2.0
I
C
, COLLECTOR CURRENT (mA)
C
Safe Operating Area
= 100 mA
I
B
200
5.0
, BASE CURRENT (mA)
On Voltages
V
NPN − MPS650, MPS651; PNP − MPS750, MPS751
BE(on)
V
NPN
NPN
NPN
BE(sat)
10
MPS65
I
MPS65
C
5.0 10 20
V
@ V
500
CE(sat)
= 500 mA
0
1
@ I
CE
T
C
1.0 ms
= 2.0 V
C
/I
@ I
20
B
= 25°C
1.0 A
= 10
C
/I
B
= 10
T
50 100 200 500
I
J
C
= 25°C
= 2.0 A
2.0 A
50
100 ms
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4.0 A
100
3
−0.05
−0.02
−0.01
−2.0
−1.8
−1.6
−1.4
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
−4.0
−2.0
−1.0
−0.5
−0.2
−0.1
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
−10
0
0
−0.05
−1.0
−50
−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20
I
T
C
A
−2.0
= −10 mA
= 25°C
V
Figure 8. MPS750, MPS751 SOA,
CE
−100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Collector Saturation Region
Figure 4. MPS750, MPS751
Figure 6. MPS750, MPS751
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I
C
, COLLECTOR CURRENT (mA)
Safe Operating Area
I
−5.0
−200
B
, BASE CURRENT (mA)
I
C
On Voltages
= −100 mA
V
CE(sat)
PNP
PNP
PNP
−10
MPS75
V
MPS75
BE(sat)
0
−500
1
I
V
C
@ I
BE(on)
= −500 mA
1.0 ms
@ I
C
T
−20
C
/I
B
= 25°C
C
@ V
−1.0 A
= 10
/I
B
= 10
CE
−50 −100 −200 −500
= 2.0 V
−2.0 A
100 ms
T
−50
J
I
C
= 25°C
= −2.0 A
−4.0 A
−100