MJD31CRLG ON Semiconductor, MJD31CRLG Datasheet - Page 3

• Manufacturer Part Number: MJD31CRLG
• Description: TRANS POWER NPN 3A 100V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD31CRLG

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 1.56W
• Frequency - Transition: 3MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJD31CRLG; MJD31CRLGOSTR

0.07
0.05
0.03
0.02
2.5
1.5
0.5
0.7
0.5
0.3
0.1
T
0.07
0.05
0.03
0.02
0.01
A
2
1
0
2
1
0.7
0.5
0.3
0.2
0.1
0.03
1
25
20
15
10
0.01
T
5
0
C
25
0.05
SINGLE PULSE
D = 0.5
t
r
0.02 0.03
0.01
0.05
t
0.1
@ V
0.2
r
0.07
@ V
T
CC
C
0.1
CC
I
T
50
C
Figure 3. Turn−On Time
= 10 V
A
, COLLECTOR CURRENT (AMPS)
= 30 V
(SURFACE MOUNT)
Figure 1. Power Derating
0.05
T, TEMPERATURE (°C)
75
0.1
0.3
t
d
@ V
0.5
0.2 0.3
100
BE(off)
0.7
TYPICAL CHARACTERISTICS
= 2 V
1
0.5
I
T
C
J
Figure 5. Thermal Response
/I
125
= 25°C
B
http://onsemi.com
= 10
1
2
t, TIME (ms)
150
3
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC(t)
qJC
3
= 8.33°C/W MAX
- T
0.07
0.05
0.03
+11 V
= r(t) R
0
0.7
0.5
0.3
0.2
0.1
C
DUTY CYCLE = 1%
5
3
2
1
0.03
= P
t
qJC
(pk)
r
, t
- 9 V
1
f
≤ 10 ns
0.05 0.07 0.1
10
q
R
REVERSE ALL POLARITIES FOR PNP.
JC(t)
t
B
f
Figure 2. Switching Time Test Circuit
D
@ V
and R
1
t
f
1N5825 USED ABOVE I
MSD6100 USED BELOW I
25 ms
MUST BE FAST RECOVERY TYPE, e.g.:
@ V
CC
20
C
CC
I
= 30 V
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
Figure 4. Turn−Off Time
, COLLECTOR CURRENT (AMPS)
= 10 V
30
P
50
51
0.2
(pk)
DUTY CYCLE, D = t
t
s
′
R
t
0.3
B
1
B
100
≈ 100 mA
B
t
2
≈ 100 mA
- 4 V
0.5 0.7
200 300
D
1
1
/t
+ 30 V
I
I
t
T
2
1
B1
C
s
V
J
′ = t
/I
CC
= 25°C
B
= I
= 10
R
s
500
B2
C
- 1/8 t
SCOPE
2
f
1 k
3