2N4922G ON Semiconductor, 2N4922G Datasheet

2N4922G

Manufacturer Part Number

2N4922G

Description

TRANS NPN GP 1A 60V HP TO225AA

Manufacturer

ON Semiconductor

Datasheet

1.2N4923G.pdf (6 pages)

Specifications of 2N4922G

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

60V

Vce Saturation (max) @ Ib, Ic

600mV @ 100mA, 1A

Dc Current Gain (hfe) (min) @ Ic, Vce

30 @ 500mA, 1V

Power - Max

30W

Frequency - Transition

3MHz

Mounting Type

Through Hole

Package / Case

TO-225-3

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

60 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

1 A

Power Dissipation

30 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

3 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

3 MHz

Minimum Operating Temperature

- 65 C

Number Of Elements

Collector-emitter Voltage

60V

Collector-base Voltage

60V

Emitter-base Voltage

Collector Current (dc) (max)

Dc Current Gain (min)

Frequency (max)

3MHz

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

Package Type

TO-225

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

2N4922GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N4922G

Manufacturer:

ON Semiconductor

Quantity:

500

Company:

H&T Electronics

Part Number:

2N4922G

Quantity:

7 000

Current page: 1 of 6
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Î Î Î Î Î Î Î Î Î Î Î Î

2N4921, 2N4922, 2N4923

Medium−Power Plastic

NPN Silicon Transistors

circuits, switching, and amplifier applications.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. The 1.0 A maximum I

2. Recommend use of thermal compound for lowest thermal resistance.

*Indicates JEDEC Registered Data.

*For additional information on our Pb−Free strategy and soldering details, please

January, 2006 − Rev. 11

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector−Emitter Voltage

Emitter Base Voltage

Collector Current − Continuous (Note 1)

Base Current

Total Power Dissipation @ T

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction−to−Case

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

These high−performance plastic devices are designed for driver

Low Saturation Voltage − V

Excellent Power Dissipation Due to Thermopad Construction −

Excellent Safe Operating Area

Gain Specified to I

Complement to PNP 2N4918, 2N4919, 2N4920

Pb−Free Packages are Available*

The 3.0 A maximum value is based upon actual current handling capability of

the device (see Figures 5 and 6).

Derate above 25_C

= 30 W @ T

Characteristic

Rating

− Continuous

2N4923 is a Preferred Device

value is based upon JEDEC current gain requirements.

= 1.0 A

= 25_C

CE(sat)

2N4921

2N4922

2N4923

2N4921

2N4922

2N4923

(Note 2)

= 0.6 Vdc (Max) @ I

Î Î Î

Symbol

, T

CEO

stg

Î Î Î Î

–65 to +150

Value

0.24

Max

4.16

5.0

1.0

3.0

1.0

Î Î Î Î

= 1.0 A

mW/_C

_C/W

Unit

Vdc

Adc

Preferred devices are recommended choices for future use

and best overall value.

2N4921

2N4921G

2N4922

2N4922G

2N4923

2N4923G

Device

40−80 VOLTS, 30 WATTS

POWER TRANSISTORS

GENERAL PURPOSE

ORDERING INFORMATION

2N492x = Device Code

2 1

MARKING DIAGRAM

http://onsemi.com

1.0 AMPERE

(Pb−Free)

Package

TO−225

= Year

= Work Week

= Pb−Free Package

x = 1, 2, or 3

N492xG

YWW

Publication Order Number:

CASE 77

STYLE 1

TO−225

500 Units / Box

Shipping

2N4921/D

Related parts for 2N4922G

2N4922G Summary of contents

Page 1

... Shipping 2N4921 TO−225 500 Units / Box 2N4921G TO−225 500 Units / Box (Pb−Free) 2N4922 TO−225 500 Units / Box 2N4922G TO−225 500 Units / Box (Pb−Free) 2N4923 TO−225 500 Units / Box 2N4923G TO−225 500 Units / Box (Pb−Free) Preferred devices are recommended choices for future use and best overall value ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

T , CASE TEMPERATURE (°C) C Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. APPROX TURN−ON PULSE ...

Page 4

D = 0.5 0.5 0.3 0.2 0.2 0.1 0.05 0.1 0.07 0.01 0.05 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 10 7.0 5.0 5.0 ms 3.0 2 150° 1.0 ...

Page 5

T = 150°C J 100 25° −55 ° 2.0 3.0 5 100 200 300 500 I , COLLECTOR CURRENT (mA) C Figure 8. Current Gain 8 ...

Page 6

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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