BUB323ZG ON Semiconductor, BUB323ZG Datasheet - Page 5

• Manufacturer Part Number: BUB323ZG
• Description: TRANS DARL NPN 10A 350V D2PAK
• Manufacturer: ON Semiconductor

Specifications of BUB323ZG

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1.7V @ 250mA, 10A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 5A, 4.6V
• Power - Max: 150W
• Frequency - Transition: 2MHz
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
10
0
100
0.1
1
Figure 9. Base−Emitter Saturation Voltage
I
C
Figure 7. Collector Saturation Region
/I
I
C
B
5 A
= 3 A
= 150
I
C
, COLLECTOR CURRENT (MILLIAMPS)
Figure 5. DC Current Gain
I
C
I
B
, COLLECTOR CURRENT (AMPS)
, BASE CURRENT (MILLIAMPS)
7 A
8 A
V
CE
1000
10
= 1.5 V
T
1
J
= 125°C
10 A
25°C
T
J
= 25°C
−40°C
125°C
T
J
= 25°C
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BUB323Z
10000
100
10
5
10000
1000
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
100
0.1
0.1
Figure 8. Collector−Emitter Saturation Voltage
TYP + 6Σ
V
I
Figure 10. Base−Emitter “ON” Voltages
C
CE
/I
B
= 2 VOLTS
= 150
I
C
, COLLECTOR CURRENT (MILLIAMPS)
Figure 6. DC Current Gain
I
I
C
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
25°C
1000
T
J
= 25°C
V
TYPICAL
CE
= 5 V, T
1
1
TYP − 6Σ
J
= 25°C
10000
125°C
T
J
= 125°C
100000
10
10