KSC5338DWTM Fairchild Semiconductor, KSC5338DWTM Datasheet - Page 6

• Manufacturer Part Number: KSC5338DWTM
• Description: TRANSISTOR NPN 450V 5A D2-PAK
• Manufacturer: Fairchild Semiconductor

Specifications of KSC5338DWTM

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 1A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 6 @ 2A, 1V
• Power - Max: 75W
• Frequency - Transition: 11MHz
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
Typical Characteristics
Figure 15. Reverse Bias Safe Operating
1000
800
600
400
200
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
200
0
0
2
Vcc = 50V
V
L
I
V
V
L
Bon
Figure 13. Inductive Fall Time
C
Figure 17. RBSOA Saturation
BE
C
CC
Z
300
= 1mH
= 300V
= 200
(off) = -5V
1
= I
= 15V
4
Boff
V
µ
CE
H
2
400
Ic = 3.3 Ib
[V], COLLECTOR-EMITTER VOLTAGE
6
Ic = 4 Ib
I
CE
Ic = 5 Ib
[A], COLLECTOR CURRENT
3
500
8
h
FE
4
, FORCED GAIN
600
10
I
C
5
= 1A @ T
700
12
(Continued)
6
-5V
Ic = 2.2 Ib
I
J
800
C
=125
14
= 2A @ T
I
C
I
7
C
= 2A @ T
= 1A @ T
o
C
900
Vcc = 50V
V
L
Ic = 4 Ib
16
C
BE
8
= 1mH
(off) = -5V
J
=125
J
=25
J
1000
=25
18
o
9
C
o
C
o
C
1100
20
10
6
0.01
100
100
0.1
10
75
50
25
0
1
10
0
Figure 14. Safe Operating Area
Figure 16. Power Derating
25
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
50
C
[
O
DC
C], CASE TEMPERATURE
5ms
75
100
100
1ms
125
10
µ
S
150
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1
µ
s
1000
175