PN100_D75Z Fairchild Semiconductor, PN100_D75Z Datasheet

TRANS GP NPN 45V 500MA TO-92

PN100_D75Z

Manufacturer Part Number
PN100_D75Z
Description
TRANS GP NPN 45V 500MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of PN100_D75Z

Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
400mV @ 20mA, 200mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 5V
Power - Max
625mW
Frequency - Transition
250MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PN100/PN100A/MMBT100/MMBT100A Rev. C1
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at collector currents to 300mA.
• Sourced from process 10.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2.
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Thermal Characteristics
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06."
V
V
V
I
T
P
R
R
C
J
CEO
CBO
EBO
D
θJC
θJA
, T
Symbol
stg
Symbol
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
1. Emitter 2. Base 3. Collector
1
T
A
Mark: PN100/PN100A
=25°C unless otherwise noted
Parameter
T
a
= 25°C unless otherwise noted
Parameter
TO-92
1
C
B
PN100A
PN100
E
SOT-23
83.3
625
200
5.0
- Continuous
Max.
Ratings
*MMBT100A
*MMBT100
350
357
2.8
www.fairchildsemi.com
October 2008
-55 ~ +150
mW/°C
Units
°C/W
°C/W
Units
500
mW
6.0
45
75

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PN100_D75Z Summary of contents

Page 1

... D Derate above 25°C R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA * Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06." © 2008 Fairchild Semiconductor Corporation PN100/PN100A/MMBT100/MMBT100A Rev TO-92 1 Mark: PN100/PN100A T = 25°C unless otherwise noted a Parameter T =25° ...

Page 2

... Base-Emitter Saturation Voltage BE(sat) Small Signal Characteristics f Current Gain Bandwidth Product T C Output Capacitance obo NF Noise Figure * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% © 2008 Fairchild Semiconductor Corporation PN100/PN100A/MMBT100/MMBT100A Rev =25°C unless otherwise noted C Test Condition I = 10μ ...

Page 3

... Figure 3. Base-Emitter Saturation Voltage vs Collector Current 60V AMBIE NT TEMP ERATURE ( C) A Figure 5. Collector Cutoff Current vs Ambient Temperature © 2008 Fairchild Semiconductor Corporation PN100/PN100A/MMBT100/MMBT100A Rev. C1 0.4 Vce = 5V 0.3 0.2 0.1 100 200 300 500 1 Figure 2. Collector-Emitter Saturation Voltage 1 0.8 0.6 125 °C 0.4 β ...

Page 4

... IB1 = IB2 = 150 cc 120 COLLECTOR CURRENT (mA) C Figure 7. Switching Times vs Collector Current © 2008 Fairchild Semiconductor Corporation PN100/PN100A/MMBT100/MMBT100A Rev. C1 (Continued) 700 t s 600 500 400 300 200 t r 100 0 100 200 300 0 4 TO-92 SOT- 100 125 ...

Page 5

... Package Dimension (TO92) © 2008 Fairchild Semiconductor Corporation PN100/PN100A/MMBT100/MMBT100A Rev www.fairchildsemi.com ...

Page 6

... Package Dimension (SOT23) © 2008 Fairchild Semiconductor Corporation PN100/PN100A/MMBT100/MMBT100A Rev www.fairchildsemi.com ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...

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