PN2222_J18Z Fairchild Semiconductor, PN2222_J18Z Datasheet
PN2222_J18Z
Manufacturer Part Number
PN2222_J18Z
Description
TRANS GP NPN 40V 1A TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.PN2222BU.pdf
(3 pages)
Specifications of PN2222_J18Z
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
©2004 Fairchild Semiconductor Corporation
General Purpose Transistor
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width 300 s, Duty Cycle 2%
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
f
C
C
CBO
EBO
T
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(sat)
Collector-Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
PN2222
I
I
I
V
V
V
V
I
I
V
V
C
C
E
C
C
CB
EB
CE
CE
CE
CB
=10 A, I
=10 A, I
=10mA, I
=500mA, I
=500mA, I
=3V, I
=50V, I
=10V, I
=10V, *I
=20V, I
=10V, I
Test Condition
C
C
E
B
E
=0
C
E
C
=0
=0
C
=0
=0
=0, f=1MHz
=0.1mA
B
B
=20mA, f=100MHz
=150mA
=50mA
=50mA
1. Emitter 2. Base 3. Collector
1
-55 ~ 150
Min.
Value
100
300
60
30
35
600
625
150
5
60
30
5
TO-92
Max.
0.01
300
10
1
2
8
Rev. A, November 2004
Units
mW
mA
V
V
V
C
C
Units
MHz
nA
pF
V
V
V
V
V
A
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PN2222_J18Z Summary of contents
Page 1
... FE V (sat) * Collector-Emitter Saturation Voltage CE V (sat) * Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob * Pulse Test: Pulse Width 300 s, Duty Cycle 2% ©2004 Fairchild Semiconductor Corporation PN2222 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, November 2004 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...