TIP47 ON Semiconductor, TIP47 Datasheet - Page 4

• Manufacturer Part Number: TIP47
• Description: TRANS NPN 1A 250V HI PWR TO220AB
• Manufacturer: ON Semiconductor

Specifications of TIP47

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 1V @ 200mA, 1A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 300mA, 10V
• Power - Max: 2W
• Frequency - Transition: 10MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TIP47OS

INPUT
0.05
0.02
5.0
2.0
1.0
0.5
0.2
0.1
0.05
5.0
2.0
1.0
0.5
0.2
0.1
5.0
Note A: Input pulse width is increased until I
Figure 5. Active Region Safe Operating Area
0.02
CURVES APPLY
BELOW RATED V
T
C
≤ 25°C
50
10
V
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ 25°C
BONDING WIRE LIMITED
V
CE
50
BB1
0.05
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
MJE171
= 10 V
I
C
20
Figure 6. Turn−Off Time
, COLLECTOR CURRENT (AMPS)
CEO
0.1
V
0
t
t
R
R
s
150 W
100 W
BB2
f
BB1
BB2
=
50
=
=
0.2
dc
V
CE
100
1.0 ms
TIP47
TIP48
TIP50
MONITOR
0.5
TUT
Figure 8. Inductive Load Switching
0.1 W
R
CM
S
T
V
I
C
200
=
J
CC
/I
= 0.63 A.
= 25°C
B
= 200 V
= 5.0
1.0
100 mH
I
100 ms
C
V
500 ms
CC
MONITOR
http://onsemi.com
= 20 V
500
2.0
4
+ 4.5
+ 3.5
+ 2.5
+ 1.5
+ 0.5
- 0.5
- 1.5
- 2.5
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
COLLECTOR
COLLECTOR
0.02
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
0
CURRENT
VOLTAGE
VOLTAGE
INPUT
*APPLIES FOR I
q
q
VB
Figure 7. Temperature Coefficients
VC
V
0.05
0.63 A
CE(sat)
FOR V
J(pk)
V
- 5 V
FOR V
10 V
CER
0 V
0 V
I
C
, COLLECTOR CURRENT (AMPS)
BE
CE(sat)
may be calculated from the data in
0.1
C
/I
B
≤ h
FE
0.2
/5
100 ms
t
(SEE NOTE A)
w
≈ 3 ms
+ 25°C to + 150°C
+ 25°C to + 150°C
J(pk)
0.5
- 55°C to + 25°C
- 55°C to + 25°C
= 150_C; T
1.0
C
− V
2.0
J(pk)
C
CE
is