MUN5213T1G ON Semiconductor, MUN5213T1G Datasheet - Page 14

• Manufacturer Part Number: MUN5213T1G
• Description: TRANS BRT NPN 100MA 50V SOT-323
• Manufacturer: ON Semiconductor

Specifications of MUN5213T1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 202mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
4.5
3.5
2.5
1.5
0.5
0.01
4
3
2
1
0
0.1
0
1
0
5
I
C
/I
V
B
R
10
Figure 44. Output Capacitance
= 10
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 42. V
15
, COLLECTOR CURRENT (mA)
--25C
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235T1G
20
20
25
0.1
CE(sat)
10
1
0
Figure 46. Input Voltage versus Output Current
25C
30
30
versus I
35
75C
10
I
f = 1 MHz
I
T
C
E
40
A
, COLLECTOR CURRENT (mA)
C
= 0 V
40
= 25C
25C
http://onsemi.com
45
20
50
50
T
14
A
= --25C
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
75C
Figure 45. Output Current versus Input Voltage
25C
V
1
O
T
A
= 0.2 V
40
= --25C
2
75C
Figure 43. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
3
50
4
T
A
= --25C
5
10
75C
6
25C
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10