DTC114YET1G ON Semiconductor, DTC114YET1G Datasheet - Page 3

TRANS NPN BIAS RES 50V SC75-3

DTC114YET1G

Manufacturer Part Number
DTC114YET1G
Description
TRANS NPN BIAS RES 50V SC75-3
Manufacturer
ON Semiconductor
Datasheet

Specifications of DTC114YET1G

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416
Package
3SOT-416
Configuration
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTC114YET1GOS
DTC114YET1GOS
DTC114YET1GOSTR

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3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector−Base Cutoff Current (V
Collector−Emitter Cutoff Current (V
Emitter−Base Cutoff Current
Collector−Base Breakdown Voltage (I
Collector−Emitter Breakdown Voltage (Note 3)
DC Current Gain
Collector−Emitter Saturation Voltage (I
Output Voltage (on)
Output Voltage (off) (V
(V
(I
(V
(I
(I
(V
(V
(V
(V
(V
C
C
C
EB
CE
CC
CC
CC
CC
CC
DTC143EET1/DTC143ZET1/DTC124XET1
= 2.0 mA, I
= 10 mA, I
= 10 mA, I
= 6.0 V, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
C
B
B
C
B
B
B
B
B
B
= 5.0 mA)
= 5 mA) DTC123EET1
= 1 mA) DTC143TET1/DTC114TET1/
= 0)
= 0)
= 2.5 V, R
= 3.5 V, R
= 5.5 V, R
= 4.0 V, R
= 0.25 V, R
CC
Characteristic
= 5.0 V, V
(Note 3)
L
L
L
L
L
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
CB
CE
B
= 50 V, I
C
= 0.5 V, R
= 50 V, I
C
= 10 mA, I
= 10 mA, I
(T
A
= 25°C unless otherwise noted)
E
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
DTC114EET1
DTC124EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC144EET1
DTC115EET1
DTC144WET1
= 0)
B
DTC143TET1
DTC143ZET1
DTC114TET1
L
= 0)
E
= 1.0 kW)
= 0)
B
DTC114EET1 Series
= 0.3 mA)
http://onsemi.com
3
V
V
Symbol
V
(BR)CBO
(BR)CEO
CE(sat)
I
I
I
V
V
CBO
CEO
h
EBO
OH
FE
OL
Min
160
160
8.0
35
60
80
80
15
80
80
80
80
80
4.9
50
50
Typ
100
140
140
350
350
200
150
140
150
140
60
15
30
Max
0.18
0.13
0.05
0.13
100
500
0.25
0.2
0.9
1.9
2.3
1.5
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.5
0.2
0.1
0.2
0.2
0.2
0.2
0.2
0.2
0.2
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc

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