DTC114YET1G ON Semiconductor, DTC114YET1G Datasheet - Page 8

• Manufacturer Part Number: DTC114YET1G
• Description: TRANS NPN BIAS RES 50V SC75-3
• Manufacturer: ON Semiconductor

Specifications of DTC114YET1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416
• Package: 3SOT-416
• Configuration: Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTC114YET1GOS; DTC114YET1GOS; DTC114YET1GOSTR

0.01
0.8
0.6
0.2
0.1
0.4
10
1
0
1
0
0
I
C
/I
B
= 10
10
Figure 20. Output Capacitance
V
Figure 18. V
R
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC144EET1
20
20
CE(sat)
100
0.1
10
1
T
A
Figure 22. Input Voltage versus Output Current
30
0
= −25°C
versus I
V
O
= 0.2 V
10
C
40
f = 1 MHz
I
T
E
40
A
DTC114EET1 Series
I
= 0 V
C
= 25°C
, COLLECTOR CURRENT (mA)
http://onsemi.com
75°C
25°C
20
50
50
8
0.001
1000
T
0.01
100
100
A
30
0.1
10
10
= −25°C
1
1
0
Figure 21. Output Current versus Input Voltage
40
75°C
75°C
25°C
2
Figure 19. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (VOLTS)
50
25°C
4
10
T
A
= −25°C
6
V
O
= 5 V
T
A
V
8
= 75°C
CE
= 10 V
25°C
−25°C
100
10