DTA123EM3T5G ON Semiconductor, DTA123EM3T5G Datasheet - Page 11

• Manufacturer Part Number: DTA123EM3T5G
• Description: TRANS PNP 50V 2.2/2.2K SOT-723
• Manufacturer: ON Semiconductor

Specifications of DTA123EM3T5G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 260mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTA123EM3T5G; DTA123EM3T5GOSTR

b1
1
e
3
D
2
−X−
E
b
2X
0.08 (0.0032)
−Y−
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
X
0.0157
0.40
Y
0.0157
A
0.0157
0.40
0.40
DTA114EM3T5G Series
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
L
C
http://onsemi.com
CASE 631AA−01
H
E
SOT−723
SOT−723
ISSUE A
11
STYLE 1:
PIN 1. BASE
0.0157
0.40
2. EMITTER
3. COLLECTOR
0.0157
0.40
SCALE 20:1
0.039
1.0
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
Y14.5M, 1982.
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
FLASH, PROTRUSIONS OR GATE BURRS.
DIM
inches
H
b1
A
C
D
E
b
e
L
mm
E
MIN
0.45
0.15
0.25
0.07
1.15
0.75
1.15
0.15
MILLIMETERS
0.40 BSC
NOM
0.50
0.20
0.12
1.20
0.80
1.20
0.20
0.3
MAX
0.55
0.27
0.35
0.17
1.25
0.85
1.25
0.25
0.0059 0.0079 0.0106
0.0028 0.0047 0.0067
0.0059 0.0079 0.0098
0.018
0.010
0.045
0.045
MIN
0.03
0.016 BSC
INCHES
NOM
0.020
0.012
0.047
0.032
0.047
MAX
0.022
0.014
0.049
0.034
0.049