DTA123EM3T5G ON Semiconductor, DTA123EM3T5G Datasheet - Page 7

• Manufacturer Part Number: DTA123EM3T5G
• Description: TRANS PNP 50V 2.2/2.2K SOT-723
• Manufacturer: ON Semiconductor

Specifications of DTA123EM3T5G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 260mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTA123EM3T5G; DTA123EM3T5GOSTR

0.01
0.1
0.8
0.6
0.4
0.2
1
1
0
0
0
I
C
/I
B
= 10
Figure 14. Output Capacitance
10
V
Figure 12. V
R
10
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EM3T5G
20
CE(sat)
20
100
0.1
T
10
A
1
= −25 C
0
Figure 16. Input Voltage versus Output Current
30
versus I
75 C
30
10
C
T
DTA114EM3T5G Series
25 C
f = 1 MHz
l
T
A
40
E
A
= −25 C
= 0 V
I
= 25 C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
20
40
50
75 C
7
25 C
0.001
1000
0.01
30
100
100
0.1
10
10
1
0
Figure 15. Output Current versus Input Voltage
1
1
V
40
O
= 0.2 V
2
Figure 13. DC Current Gain
I
C
3
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
V
4
O
= 5 V
5
10
T
6
A
= 75 C
T
A
7
= 75 C
−25 C
8
25 C
25 C
9
−25 C
100
10