DTA123JET1 ON Semiconductor, DTA123JET1 Datasheet - Page 4

• Manufacturer Part Number: DTA123JET1
• Description: TRANS PNP 50V 2.2/4.7K SC75-3
• Manufacturer: ON Semiconductor

Specifications of DTA123JET1

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 6)
Output Voltage (off) (V
Input Resistor
Resistor Ratio
(V
CC
= 5.0 V, V
B
= 0.25 V, R
CC
= 5.0 V, V
Characteristic
L
= 1.0 kW)
B
= 0.5 V, R
(T
A
= 25°C unless otherwise noted) (continued)
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
DTA114EET1/DTA124EET1
DTA144EET1/DTA115EET1
DTA114YET1
DTA114TET1/DTA143TET1
DTA123EET1/DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA144WET1
L
= 1.0 kW)
DTA114EET1 Series
http://onsemi.com
4
Symbol
R
V
R1
1
OH
/R
2
0.055
0.038
15.4
32.9
15.4
1.54
32.9
0.17
0.38
Min
7.0
7.0
7.0
3.3
1.5
3.3
3.3
0.8
0.8
1.7
4.9
70
−
0.047
0.21
0.47
Typ
100
4.7
2.2
4.7
4.7
2.2
1.0
1.0
0.1
2.1
10
22
47
10
10
22
47
−
−
0.185
0.056
Max
28.6
61.1
28.6
2.86
61.1
0.25
0.56
130
6.1
2.9
6.1
6.1
1.2
1.2
2.6
13
13
13
−
−
Unit
Vdc
kW
−