BTA212X-600D,127 NXP Semiconductors, BTA212X-600D,127 Datasheet - Page 4

TRIAC 600V 12A TO-220F

BTA212X-600D,127

Manufacturer Part Number
BTA212X-600D,127
Description
TRIAC 600V 12A TO-220F
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BTA212X-600D,127

Package / Case
TO-220-3 Full Pack
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
5mA
Current - Non Rep. Surge 50, 60hz (itsm)
95A, 105A
Current - On State (it (rms)) (max)
12A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
12A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
105 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
5 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.6 V @ 17 A
Mounting Style
SMD/SMT
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-3729
934055321127
BTA212X-600D
Philips Semiconductors
June 2003
Three quadrant triacs
guaranteed commutation
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
20
15
10
100
1000
on-state current I
5
0
80
60
40
20
100
0
0
10
Ptot / W
10us
1
ITSM / A
ITSM / A
dI /dt limit
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
T
100us
1
T(RMS)
TSM
5
Number of cycles at 50Hz
10
TSM
, versus number of cycles, for
IT(RMS) / A
, where
, versus pulse width t
1ms
T / s
I
I
T
T
Tj initial = 25 C max
Tj initial = 25 C max
p
10
= conduction angle.
100
20ms.
10ms
T
T
Ths(max) / C
tot
120
30
90
60
, versus rms
= 180
I TSM
I TSM
time
time
p
100ms
, for
15
1000
45
65
85
105
125
4
Fig.5. Maximum permissible repetitive rms on-state
current I
V
Fig.4. Maximum permissible rms current I
15
10
GT
5
0
-50
1.6
1.4
1.2
0.8
0.6
0.4
25
20
15
10
IT(RMS) / A
5
0
0.01
(T
1
-50
IT(RMS) / A
VGT(25 C)
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
T(RMS)
versus heatsink temperature T
GT
currents, f = 50 Hz; T
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
BTA212X series D, E and F
0
0
0.1
surge duration / s
BT138X
Tj / C
Ths / C
50
50
56 C
hs
Product specification
1
56˚C.
100
100
hs
.
Rev 3.000
T(RMS)
150
10
150
,
j
.

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