T2035H-600TRG STMicroelectronics, T2035H-600TRG Datasheet - Page 5

• Manufacturer Part Number: T2035H-600TRG
• Description: TRIAC 20A 600V TO-220AB
• Manufacturer: STMicroelectronics
• Series: Snubberless™r

Specifications of T2035H-600TRG

• Triac Type: Alternistor - Snubberless
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 35mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 200A, 210A
• Current - On State (it (rms)) (max): 20A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 20A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6209-5

T2035H Series
Figure 9.
Figure 11. Leakage current versus junction
Figure 13. D
1.E+01
1.E+00
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.E-01
1.E-02
1.E-03
1.E-04
80
70
60
50
40
30
20
10
0
0.1
0
50
5
V
V
DRM
DRM
Relative variation of critical rate of
decrease of main current (di/dt)c vs
reapplied (dV/dt)c
temperature for different values of
blocking voltage (typical values)
resistance versus copper surface
under tab (PCB FR4, copper
thickness 35 µm)
=V
=V
2
RRM
RRM
PAK junction to ambient thermal
10
=200 V
=200 V
75
1.0
V
V
15
DRM
DRM
=V
=V
dV/dt (V/µs)
RRM
RRM
S
CU
T
=400 V
=400 V
(cm²)
20
j
(°C)
100
V
V
DRM
DRM
25
10.0
=V
=V
RRM
RRM
=600 V
=600 V
30
125
35
D²PAK
100.0
40
150
Figure 10. Relative variation of critical rate of
Figure 12. Acceptable repetitive peak off-state
8
7
6
5
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
25
300
R
th(j-c)
=1.9 °C/W (Insulated)
350
decrease of main current (di/dt)c
versus junction temperature
voltage versus case-ambient
thermal resistance
50
R
th(j-c)
=1 °C/W (Non insulated)
400
75
V
T
DRM
j
(°C)
/V
450
RRM
(V)
100
500
Characteristics
125
550
T
J
=150 °C
600
150
5/10