SST39VF1681-70-4I-EKE-T Microchip Technology, SST39VF1681-70-4I-EKE-T Datasheet - Page 15

• Manufacturer Part Number: SST39VF1681-70-4I-EKE-T
• Description: 2.7V To 3.6V 16Mbit Multi-Purpose Flash 48 TSOP 12x20 Mm T/R
• Manufacturer: Microchip Technology

Specifications of SST39VF1681-70-4I-EKE-T

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TFSOP (0.472", 12.0mm Width)
• Architecture: Sector Erase
• Timing Type: Asynchronous
• Interface Type: CFI
• Access Time: 70 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 9 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

16 Mbit Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
©2003 Silicon Storage Technology, Inc.
FIGURE 7: T
FIGURE 8: WE# C
ADDRESS A MS-0
ADDRESS A MS-0
DQ
6
and DQ
Note: This device also supports CE# controlled Chip-Erase operation.
DQ 7-0
WE#
CE#
OE#
WE#
OE#
CE#
OGGLE
The WE# and CE# signals are interchangeable as long as minimum timings are meet. (See Table 15.)
A
A
WP# must be held in proper logic state (V
X can be V
2
MS
MS
= Most Significant Address
= A
ONTROLLED
20
B
ITS
for SST39VF168x
IL
AAA
Note: A
or V
T
T WP
SW0
AA
IMING
IH,
A
but no other value.
MS
MS
C
= A
HIP
T OEH
D
= Most Significant Address
555
IAGRAM
SW1
20
-E
55
for SST39VF168x
RASE
SIX-BYTE CODE FOR CHIP-ERASE
AAA
T
SW2
IMING
T CE
80
T OE
IL
or V
D
AAA
IH
15
IAGRAM
) 1 µs prior to and 1 µs after the command sequence.
SW3
AA
555
SW4
55
AAA
SW5
10
WITH SAME OUTPUTS
TWO READ CYCLES
Preliminary Specifications
T SCE
S71243-03-000
1243 F06.0
1243 F07.0
T OES
11/03