TS86101G2BCGL E2V, TS86101G2BCGL Datasheet - Page 37

• Manufacturer Part Number: TS86101G2BCGL
• Manufacturer: E2V

Specifications of TS86101G2BCGL

• Lead Free Status / RoHS Status: Not Compliant

Figure 11-2. Simplified Thermal Models for CI-CGA 255 Package
Notes:
12. Applying the TS86101G2B MUXDAC
12.1
e2v semiconductors SAS 2009
Assumptions :
Square die 7.91x7.91=62.6 mm2,
60 µm thick Cyanate Ester/Ag glue,
0.85 mm ceramic thickness under die,
Pb90Sn10 columns diameter 0.89 mm
2.02 mm length under bottom of LGA,
21x21 mm CLGA.
SnPb solder
Ceramic package
(Bottom half of thickness)
Al2O3 Interposer
Cyanate Ester/Ag glue
Ceramic package
(Top half of thickness)
Columns
PbSn
λ = 0.17 W/cm/˚C
1. Typical values, assuming that the power dissipation is uniform over 25% of the die’s top surface, are extracted from ANSYS
2. CI-CGA 255 package is hermetic.
Accessing Power Supplies
λ = 0.40 W/cm/˚C
Silicon Die
62.6 mm2
λ = 0.95 W/cm/˚C
λ = 0.02 W/cm/˚C
λ = 0.17 W/cm/˚C
thermal simulation.
The TS86101G2B MUXDAC features three different power supplies (V
two different ground planes (analog ground plane AGND and digital ground plane DGND). We highly
recommend that the analog and digital planes be fully separated (both at board level and externally).
Silicon Junction
˚C/Watt
˚C/Watt
(Bottom of
Columns
of 4x4array
at center
which are
under die)
5.6
1.6
Bottom
center of
package
2.6˚C/Watt
0.8˚C/Watt
0.20˚C/Watt
0.80˚C/Watt
(Bottom of
48 Columns
around
die footprint)
"around"
center of
package
0.6
2.0
˚C/Watt
˚C/Watt
4.1˚C/Watt
(Bottom of
80 Columns
around
die footprint)
"around"
center of
package
Top of lid
2.8 ˚C/Watt
0.4
˚C/Watt
˚C/Watt
1.6
0.4˚C/Watt
(Bottom of 111
Edge of
package
others Columns
which are
at peripheral)
0.3
˚C/Watt
˚C/Watt
1.0
Silicon Junction
1.6
5.6
0.8
0.20
0.80
2.6
Case were all Bottom of Columns
are connected to infinite heatsink :
0.6
2.0
at bottom of columns
Infinite heatsink
4.1
0.4
CCD
1.6
, V
(Result using SPICE, thermal to
electrical equivalent model)
EED
2.8
TS86101G2B
1.0
0.3
0992D–BDC–04/09
and V
Reduction
at bottom of columns
EEA
Infinite heatsink
) as well as
Junction
Silicon
4.52˚C/Watt
37