CY8C5487LTI-007 Cypress Semiconductor Corp, CY8C5487LTI-007 Datasheet - Page 80

• Manufacturer Part Number: CY8C5487LTI-007
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY8C5487LTI-007

• Lead Free Status / RoHS Status: Compliant

11.7 Memory
Specifications are valid for -40°C ≤ Ta ≤ 85°C and Tj ≤ 100°C, except where noted. Specifications are valid for 1.71 V to 5.5 V, except
where noted.
11.7.1 Flash
Table 11-56. Flash DC Specifications
Table 11-57. Flash AC Specifications
11.7.2 EEPROM
Table 11-58. EEPROM DC Specifications
Table 11-59. EEPROM AC Specifications
11.7.3 Nonvolatile Latches (NVL)
Table 11-60. NVL DC Specifications
Document Number: 001-55036 Rev. *F
Twrite
Terase
Tbulk
Twrite
Parameter
Parameter
Parameter
Parameter
Parameter
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (16 KB to 64 KB)
Sector erase time (16 KB)
Total device program time
(including JTAG, etc.)
Flash endurance
Flash data retention time
Erase and program voltage
Single byte erase/write cycle time
EEPROM endurance
EEPROM data retention time
Erase and program voltage
Erase and program voltage
Description
Description
Description
Description
Description
PRELIMINARY
Vddd pin
Retention period measured from
last erase cycle
Retention period measured from
last erase cycle (up to 100K cycles)
Vddd pin
Conditions
Conditions
Conditions
Conditions
Conditions
PSoC
®
1.71
100k
Min
1.71
1.71
Min
Min
Min
Min
1M
20
20
5: CY8C54 Family Data
-
-
-
-
-
-
-
Typ
Typ
Typ
Typ
Typ
-
2
-
-
-
-
-
-
-
-
-
-
-
-
Max
Max
Max
Max
Max
5.5
5.5
5.5
10
35
15
15
15
5
5
-
-
-
-
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program/
program/
seconds
Units
cycles
cycles
Units
erase
years
Units
Units
erase
years
Units
ms
ms
ms
ms
ms
ms
V
V
V
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