MG100Q2YS42(AC) Toshiba, MG100Q2YS42(AC) Datasheet
MG100Q2YS42(AC)
Specifications of MG100Q2YS42(AC)
Related parts for MG100Q2YS42(AC)
MG100Q2YS42(AC) Summary of contents
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... TOSHIBA GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications l High input impedance l High speed : t = 0.5µs (max 0.5µs (max Low saturation voltage : V = 4.0V (max) CE (sat) l Enhancement-mode l Includes a complete half bridge in one package. l The electrodes are isolated from case. ...
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Electrical Characteristics Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance (Ta = 25°C) Symbol Test Condition ...
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MG100Q2YS42 2001-08-16 ...
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MG100Q2YS42 2001-08-16 ...
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MG100Q2YS42 2001-08-16 ...
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... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...