IXFH60N50P3 IXYS, IXFH60N50P3 Datasheet - Page 2

• Manufacturer Part Number: IXFH60N50P3
• Description: MOSFET N-CH 500V 60A TO247
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFH60N50P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 6250pF @ 25V
• Power - Max: 1040W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 60 S, 35 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 60 A
• Power Dissipation: 1040 W
• Mounting Style: Through Hole
• Fall Time: 8 ns
• Gate Charge Qg: 96 nC
• Rise Time: 16 ns
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.1
• Ciss, Typ, (pf): 6250
• Qg, Typ, (nc): 96
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1040
• Rthjc, Max, (ºc/w): 0.12
• Package Style: TO-247
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
TO-263 Outline
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Test Conditions
V
V
Gate Input Resistance
Resistive Switching Times
V
R
V
(TO-247 & TO-3P)
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 30A, -di/dt = 100A/μs
= 100V, V
= 10V, V
= 1Ω (External)
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
ADVANCE TECHNICAL INFORMATION
GS
= 0V, Note 1
D
DS
DS
GS
DS
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0V
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
35
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
6250
Typ.
0.25
680
1.0
1.0
60
18
37
96
28
26
11
16
5
8
0.12 °C/W
Max.
Max.
250
240
6,404,065 B1
6,534,343
6,583,505
1.4
60
°C/W
IXFT60N50P3 IXFQ60N50P3
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-3P (IXFQ) Outline
TO-247 Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
IXFH60N50P3
3 - Source
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
2 - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216