MC100EP11DG ON Semiconductor, MC100EP11DG Datasheet - Page 11

• Manufacturer Part Number: MC100EP11DG
• Description: IC BUFFER FANOUT DIFF 1:2 8SOIC
• Manufacturer: ON Semiconductor
• Series: 100EPr
• Type: Fanout Buffer (Distribution)r

Specifications of MC100EP11DG

• Number Of Circuits: 1
• Ratio - Input:output: 1:2
• Differential - Input:output: Yes/Yes
• Input: ECL, PECL
• Output: ECL, PECL
• Frequency - Max: 3GHz
• Voltage - Supply: 3 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Frequency-max: 3GHz
• Number Of Outputs: 4
• Max Input Freq: >3000 MHz (Typ)
• Propagation Delay (max): 0.27 ns @ 3V to 5.5V
• Supply Voltage (max): - 5.5 V or 5.5 V
• Supply Voltage (min): - 3 V or 3 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MC100EP11DGOS

0.15 (0.006) T
0.15 (0.006) T
−T−
0.10 (0.004)
SEATING
PLANE
L
U
U
S
S
PIN 1
IDENT
D
2X
L/2
C
8
1
−V−
A
8x
4
5
K
G
0.10 (0.004)
REF
−U−
B
PACKAGE DIMENSIONS
PLASTIC TSSOP PACKAGE
http://onsemi.com
M
T
CASE 948R−02
DT SUFFIX
U
TSSOP−8
DETAIL E
ISSUE A
S
11
DETAIL E
V
S
F
0.25 (0.010)
M
−W−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
5. TERMINAL NUMBERS ARE SHOWN FOR
6. DIMENSION A AND B ARE TO BE DETERMINED
Y14.5M, 1982.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
REFERENCE ONLY.
AT DATUM PLANE -W-.
DIM
M
A
B
C
D
F
G
K
L
MILLIMETERS
MIN
2.90
2.90
0.80
0.05
0.40
0.25
0
0.65 BSC
4.90 BSC
_
MAX
3.10
3.10
1.10
0.15
0.70
0.40
6
_
0.031
0.002
0.016
0.010
0.114
0.114
MIN
0.026 BSC
0.193 BSC
0
INCHES
_
MAX
0.122
0.122
0.043
0.006
0.028
0.016
6
_