CY7C1315KV18-250BZXI Cypress Semiconductor Corp, CY7C1315KV18-250BZXI Datasheet - Page 22

• Manufacturer Part Number: CY7C1315KV18-250BZXI
• Description: CY7C1315KV18-250BZXI
• Manufacturer: Cypress Semiconductor Corp
• Series: -r

Specifications of CY7C1315KV18-250BZXI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Ambient temperature with power applied . –55 C to +125 C
Supply voltage on V
Supply voltage on V
DC applied to outputs in High Z ........ –0.5 V to V
DC input voltage
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage (MIL-STD-883, M. 3015).. > 2001 V
Latch up current..................................................... > 200 mA
Operating Range
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-58904 Rev. *C
V
V
V
V
V
V
V
V
I
I
V
20. Overshoot: V
21. Power up: Assumes a linear ramp from 0 V to V
22. All voltage referenced to Ground.
23. Output are impedance controlled. I
24. Output are impedance controlled. I
25. V
Commercial
Industrial
X
OZ
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
Range
REF
(min) = 0.68 V or 0.46 V
IH
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
Input reference voltage
(AC) < V
[20]
Temperature (T
–40 °C to +85 °C
0 C to +70 C
DD
DDQ
............................. –0.5 V to V
DDQ
Description
Ambient
relative to GND ........–0.5 V to +2.9 V
relative to GND....... –0.5 V to +V
+ 0.85 V (Pulse width less than t
[22]
DDQ
, whichever is larger, V
OH
OL
= (V
=
A

)
(V
DDQ
[25]
DDQ
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
1.8 ± 0.1 V
DD
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 .
V
DD
(min) within 200 ms. During this time V
–
–
Note 23
Note 24
I
I
–
–
GND  V
GND  V
Typical value = 0.75 V
OH
OL
[21]
= 0.1 mA, nominal impedance
=0.1 mA, nominal impedance
REF
DDQ
DD
CYC
(max) = 0.95 V or 0.54 V
I
I
V
+ 0.3 V
+ 0.3 V
1.4 V to
 V
 V
/2), Undershoot: V
DDQ
V
Test Conditions
DD
DDQ
DDQ,
DD
[21]
output disabled
Neutron Soft Error Immunity
IL
LSBU
LMBU
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical 
cation Note
Failure Rates - AN54908
(AC) >
Parameter
DDQ
IH
, whichever is smaller.
< V

1.5 V (Pulse width less than t
CY7C1313KV18, CY7C1315KV18
CY7C1311KV18, CY7C1911KV18
DD
2
, 95% confidence limit calculation. For more details refer to Appli-
Accelerated Neutron SER Testing and Calculation of Terrestrial
and V
Description
Single event
DDQ
single-bit
multi-bit
latch up
Logical
Logical
upsets
upsets
V
V
< V
DDQ
DDQ
V
V
DDQ
REF
DD
–0.3
0.68
Min
V
1.7
1.4
/2 – 0.12
/2 – 0.12
.
5
5
SS
+ 0.1
– 0.2
Conditions
CYC
25 °C
25 °C
85 °C
Test
/2).
0.75
Typ
1.8
1.5
–
–
–
–
–
–
–
–
V
V
DDQ
DDQ
V
V
Typ Max* Unit
197
DDQ
REF
0
0
V
Max
0.95
V
/2 + 0.12
/2 + 0.12
1.9
0.2
DDQ
DD
5
5
– 0.1
+ 0.3
Page 22 of 33
0.01
216
0.1
Unit
FIT/
FIT/
FIT/
Dev
Mb
Mb
A
A
V
V
V
V
V
V
V
V
V
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