CY7C1412KV18-300BZXI Cypress Semiconductor Corp, CY7C1412KV18-300BZXI Datasheet - Page 30

• Manufacturer Part Number: CY7C1412KV18-300BZXI
• Description: CY7C1412KV18-300BZXI
• Manufacturer: Cypress Semiconductor Corp
• Series: -r

Specifications of CY7C1412KV18-300BZXI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 36M (2M x 18)
• Speed: 300MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Acronyms
Document Number: 001-57825 Rev. *D
DDR
FBGA
HSTL
I/O
JTAG
LSB
MSB
PLL
QDR
SRAM
TAP
TCK
TMS
TDI
TDO
TQFP
Acronym
double data rate
fine-pitch ball grid array
high-speed transceiver logic
input/output
joint test action group
least significant bit
most significant bit
phase locked loop
quad data rate
static random access memory
test access port
test clock
test mode select
test data-in
test data-out
thin quad flat pack
Description
Document Conventions
Units of Measure

%
µs
ms
ns
V
µA
mA
mm
MHz
pF
W
°C
Symbol
CY7C1410KV18, CY7C1425KV18
CY7C1412KV18, CY7C1414KV18
ohms
percent
micro seconds
milli seconds
nano seconds
Volts
micro Amperes
milli Amperes
milli meter
Mega Hertz
pico Farad
Watts
degree Celcius
Unit of Measure
Page 30 of 32
[+] Feedback