NE34018-64-A CALIFORNIA EASTERN LABS, NE34018-64-A Datasheet

NE34018-64-A

Manufacturer Part Number

NE34018-64-A

Description

Manufacturer

CALIFORNIA EASTERN LABS

Datasheet

1.NE34018-64-A.pdf (10 pages)

Specifications of NE34018-64-A

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FEATURES

• LOW COST MINIATURE PLASTIC PACKAGE

• LOW NOISE FIGURE:

• HIGH ASSOCIATED GAIN:

• L

• TAPE & REEL PACKAGING

DESCRIPTION

NEC's NE34018 is a low cost gallium arsenide Hetero-Junc-

tion FET housed in a miniature (SOT-343) plastic surface

mount package. The device is fabricated using ion implanta-

tion for improved RF and DC performance, reliability, and

uniformity. Its low noise figure, high gain, small size and

weight make it an ideal low noise amplifier transistor in the 1-

3 GHz frequency range. The NE34018 is suitable for GPS,

PCS, WLAN, MMDS, and other commercial applications.

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

ELECTRICAL CHARACTERISTICS

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production

line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.

(SOT-343)

0.6 dB typical at 2 GHz

16.0 dB typical at 2 GHz

SYMBOL

O/P I

TH(CH-A)

GSO

= 0.6 µ µ µ µ µ m, W

DSS

1dB

Noise Figure at V

Associated Gain at V

Output Power at 1 dB Gain Compression Point, f = 2 GHz

Gain at P

Output I

Saturated Drain Current at V

Pinch Off Voltage at V

Transconductance at V

Gate to Source Leakage Current at V

Thermal Resistance (Channel to Ambient)

= 400 µ µ µ µ µ m

= 2 V, I

= 3 V, I

= 2 V, I

= 3 V, I

= 2 V, I

1dB

at f = 2 GHz, ∆f = 1 MHz

, f = 2 GHz

PARAMETERS AND CONDITIONS

= 30 mA

= 10 mA

= 30 mA

= 10 mA

= 30 mA

= 2 V, I

PACKAGE OUTLINE

GaAs HJ-FET L TO S BAND

= 2 V, I

PART NUMBER

= 2 V, I

= 5 mA, f = 2 GHz

= 2 V, V

LOW NOISE AMPLIFIER

= 5 mA, f = 2 GHz

= 100 µA

= 5 mA

(New Plastic Package)

= 25°C)

= -3 V

= 0 V

18 Package

0.5

California Eastern Laboratories

NOISE FIGURE & ASSOCIATED

UNITS

˚C/W

dBm

µA

GAIN vs. FREQUENCY

Frequency, f (GHz)

= 3 V, I

MIN

14.0

-2.0

= 20 mA

NE34018

5 6 7 8 910

NE34018

TYP

16.0

16.5

17.0

17.5

-0.8

833

0.6

0.5

SOT-343 Style

MAX

120

-0.2

1.0

Related parts for NE34018-64-A

NE34018-64-A Summary of contents

Page 1

... Its low noise figure, high gain, small size and weight make it an ideal low noise amplifier transistor in the 1- 3 GHz frequency range. The NE34018 is suitable for GPS, PCS, WLAN, MMDS, and other commercial applications. NEC's stringent quality assurance and test procedures en- sure the highest reliability and performance ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Drain Voltage GDO V Gate to Source Voltage GSO I Drain Current DS T Channel Temperature CH T Storage Temperature STG P Total Power Dissipation T ...

Page 3

TYPICAL SCATTERING PARAMETERS GHz . GHz 1.5 2 -.2 -.4 -.6 -1.5 -. ...

Page 4

TYPICAL SCATTERING PARAMETERS GHz . GHz 1.5 2 -.2 -.4 -.6 -1.5 -. ...

Page 5

TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 (GHz) MAG ANG 0.50 0.969 -18.6 0.60 0.958 -22.1 0.70 0.946 -25.7 0.80 0.931 -29.2 0.90 0.916 -32.7 1.00 0.899 -36.1 1.20 0.864 -42.9 ...

Page 6

... NE34018 TYPICAL SCATTERING PARAMETERS GHz . GHz 1.5 2 -.2 -.4 -.6 -1.5 -. FREQUENCY S 11 (GHz) MAG ANG 0.50 0.977 -17.0 0.60 0.969 -20.2 0.70 0.959 -23.5 0.80 0.948 -26.8 0.90 0.937 -30.0 1.00 0.923 -33.2 1.20 0.895 -39.6 1.40 0.863 -45.8 1.60 ...

Page 7

... NE34018 MAG 22 MAG ANG (dB) 0.667 -7.3 0.215 27.335 0.663 -8.8 0.255 26.528 0.655 -10.2 0.282 25.846 0.649 -11.6 ...

Page 8

... NE34018 NONLINEAR MODEL SCHEMATIC LG_PKG GATE 0.18nH FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -0.6885 RG VTOSC 0 RD ALPHA 5 RS BETA 0.1838 RGMET GAMMA 0.038 KF GAMMADC 0. 1.8 TNOM DELTA 0.25 XTI VBI 0 3e-13 VTOTC N 1 BETATCE RIS 0 FFE RID 0 TAU 4e-12 CDS ...

Page 9

... CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE ORDERING INFORMATION PART NUMBER NE34018-A NE34018-TI-63-A +0.10 0.3 -0.05 NE34018-TI-64-A (LEADS 0.65 1.3 0.65 Pin Connections 1. Source 2. Gate 3. Source 4. Drain +0 ...

Page 10

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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