S8836B Toshiba, S8836B Datasheet
S8836B
Manufacturer Part Number
S8836B
Description
Manufacturer
Toshiba
Datasheet
1.S8836B.pdf
(4 pages)
Specifications of S8836B
Configuration
Single
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Pin Count
3
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S8836B
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
S8836B
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
MICROWAVE
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
TECHNICAL DATA
FEATURES
FEATURES
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Power Added Efficiency
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
MICROWAVE
MICROWAVE
TECHNICAL DATA
TECHNICAL DATA
FEATURES
FEATURES
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
G1dB= 7.5 dB at 8 GHz
HIGH POWER
HIGH GAIN
P1dB= 29.5 dBm at 8 GHz
CHARACTERISTICS
CHARACTERISTICS
SEMICONDUCTOR
SEMICONDUCTOR
SEMICONDUCTOR
SYMBOL
SYMBOL
R
V
V
G
P
I
th(c-c)
I
gm
GSoff
DSS
GSO
1dB
1dB
DS
add
V
I
V
I
V
V
I
Channel to Case
DS
DS
GS
DS
DS
DS
GS
= 0.28A
= 5mA
= -10 A
CONDITION
CONDITION
= 3V
=
=
= 0V
V
f
3V
3V
DS
= 8 GHz
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
SUITABLE FOR C-BAND AMPLIFIER
ION IMPLANTATION
= 10V
S8836B
S8836B
S8836B
S8836B
UNIT MIN. TYP. MAX.
UNIT MIN. TYP. MAX.
dBm
mS
C/W
dB
%
A
V
A
V
28.5
-2.0
6.5
-5
Revised Aug. 2000
29.5
0.25
0.55
7.5
-3.5
170
30
20
0.4
-5.0
0.7
30
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S8836B Summary of contents
Page 1
... I DS add SYMBOL CONDITION 0.28A GSoff 5mA DSS -10 A GSO GS R Channel to Case th(c-c) S8836B S8836B S8836B S8836B UNIT MIN. TYP. MAX. dBm 28.5 29.5 dB 6.5 7.5 A 0.25 0 UNIT MIN. TYP. MAX. mS 170 V -2.0 -3.5 -5.0 A 0. Revised Aug. 2000 ...
Page 2
... Storage PACKAGE OUTLINE (2-3K1B) 2- 1.6 0.1 HANDLING PRECAUTIONS FOR PACKAGED TYPE HANDLING PRECAUTIONS FOR PACKAGED TYPE HANDLING PRECAUTIONS FOR PACKAGED TYPE HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. S8836B SYMBOL ...
Page 3
... RF PERFORMANCES GHz GHz GHz GHz =10V =10V =10V =10V 0.25A 0.25A 0.25A 0.25A POWER DISSIPATION vs. CASE TEMPERATURE S8836B Output Power vs. Input Power Po add Pin(dBm 120 120 120 120 Tc 160 160 200 200 160 160 200 200 ...
Page 4
...