MT48H16M32LFCM-8 IT:A TR Micron Technology Inc, MT48H16M32LFCM-8 IT:A TR Datasheet - Page 15

• Manufacturer Part Number: MT48H16M32LFCM-8 IT:A TR
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M32LFCM-8 IT:A TR

• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 9/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Table 4:
CAS Latency (CL)
Operating Mode
Write Burst Mode
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. J 2/08 EN
Burst Definition Table
The CL is the delay, in clock cycles, between the registration of a READ command and
the availability of the first piece of output data. The latency can be set to two or three
clocks.
If a READ command is registered at clock edge n, and the latency is m clocks, the data
will be available by clock edge n + m. The DQs will start driving as a result of the clock
edge one cycle earlier (n + m - 1), and provided that the relevant access times are met,
the data will be valid by clock edge n + m. For example, assuming that the clock cycle
time is such that all relevant access times are met, if a READ command is registered at T0
and the latency is programmed to two clocks, the DQs will start driving after T1 and the
data will be valid by T2, as shown in Figure 7 on page 16.
Reserved states should not be used as unknown operation or incompatibility with future
versions may result.
The normal operating mode is selected by setting M7 and M8 to zero; the other combi-
nations of values for M7 and M8 are reserved for future use.
Reserved states should not be used because unknown operation or incompatibility with
future versions may result.
When M9 = 0, the BL programmed via M0–M2 applies to both READ and WRITE bursts;
when M9 = 1, the programmed BL applies to READ bursts, but write accesses are single-
location accesses.
Length
Burst
2
4
8
Starting Column Address
A2
0
0
0
0
1
1
1
1
A1
A1
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
0
0
1
1
0
0
1
1
0
0
1
1
15
A0
A0
A0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Type = Sequential
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
Order of Accesses Within a Burst
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1
1-0
©2005 Micron Technology, Inc. All rights reserved.
Register Definition
Type = Interleaved
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
0-1
1-0