N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 153

• Manufacturer Part Number: N25Q128A11B1240E
• Manufacturer: NUMONYX

Specifications of N25Q128A11B1240E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Bottom
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: TBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Supplier Unconfirmed

9.3.20
Figure 94. Read NV Configuration Register instruction sequence QIO-SPI
Write NV Configuration Register
The Write Non Volatile Configuration register (WRNVCR) instruction allows new values to
be written to the Non Volatile Configuration register. Before it can be accepted, a write
enable (WREN) instruction must previously have been executed.
Apart form the parallelizing of the instruction code and the input data on the four pins DQ0,
DQ1, DQ2 and DQ3, the instruction functionality is exactly the same as the Write Non
Volatile Configuration Register (WRNVCR) instruction of the Extended SPI protocol, please
refer to
Section 9.1.29: Write NV Configuration Register
DQ0
DQ1
DQ2
DQ3
S
C
Instruction
0
1
LS Byte MS Byte
Nonvolatile Configuration
2
5
4
6
7
3
1 13 9
0 12 8
2 14 10
3 15 11
Register Out
4
Quad_Read_NVCR
5
for further details.
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