M5M5W816TP-55HI Renesas Electronics America, M5M5W816TP-55HI Datasheet - Page 9

• Manufacturer Part Number: M5M5W816TP-55HI
• Manufacturer: Renesas Electronics America

2002.08.30
POWER DOWN CHARACTERISTICS
M5M5W816TP - 55HI, 70HI, 85HI
(2) TIMING REQUIREMENTS
(3) TIMING DIAGRAM
(1) ELECTRICAL CHARACTERISTICS
BC# control mode
S# control mode
Symbol
Vcc
Icc
t
V
Symbol
t
V
su (PD)
rec (PD)
I (BC)
I (S)
BC1#
BC2#
Vcc
Vcc
(PD)
(PD)
S#
Power down supply voltage
Byte control input BC1# & BC2#
Chip select input S#
Power down set up time
Power down recov ery t ime
Power down
supply c urrent
Parameter
Ver. 6.1
Parameter
2.2V
2.2V
On the BC# control mode, the lev el of S# must be f ixed at S# > Vcc-0.2V or S# < 0.2V.
t
t
su (PD)
su (PD)
(2)
(1)
Vcc=2.0V
2.2V < Vcc(PD)
2.0V < Vcc(PD) < 2.2V
2.2V < Vcc(PD)
2.0V < Vcc(PD) < 2.2V
BC1# and BC2# > Vcc - 0.2V
other inputs = 0 ~ Vcc
S# < 0.2V
other inputs = 0 ~ Vcc
S# > Vcc - 0.2V,
2.7V
2.7V
BC1# , BC2# > Vcc-0.2V
Test conditions
S# > Vcc-0.2V
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
Test conditions
Note 7: Typical parameter of Icc(PD) indicates the value for the
2.7V
~ +25°C
~ +40°C
~ +85°C
2.7V
~ +70°C
center of distribution at 2.0V, and not 100% tested.
t
t
rec (PD)
rec (PD)
2.0
2.2
2.2
Min
Min
0
5
-
-
-
-
Vcc(PD)
Vcc(PD)
Limits
Limits
Ty p
Ty p
0.1
0.2
2.2V
2.2V
-
-
MITSUBISHI LSIs
Max
Max
1.5
15
30
3
Units
Units
µA
ms
ns
V
V
V
8