IDT79RV4700-133DP IDT, Integrated Device Technology Inc, IDT79RV4700-133DP Datasheet - Page 13

• Manufacturer Part Number: IDT79RV4700-133DP
• Description: IC MPU 64BIT RISC 133MHZ 208-QFP
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT79RV4700-133DP

• Processor Type: RISC 64-Bit
• Speed: 133MHz
• Voltage: 3.3V
• Mounting Type: Surface Mount
• Package / Case: 208-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Features: -
• Other names: 79RV4700-133DP

Recommended Operation Temperature and Supply Voltage
DC Electrical Characteristics—R4700
Power Consumption—R4700
IDT79R4700
(
V
cc
= 5.0
I
±
CC
1.
2.
3.
4.
Parameter
Condition:
5
Parameter
V
V
V
V
V
V
I
C
C
I/O
Typical integer instruction mix and cache miss rates.
These are not tested. They are the result of engineering analysis and are provided for reference only.
Guaranteed by design.
These are the specifications IDT tests to insure compliance.
IN
%, T
OL
OH
OL
OH
IL
IH
System
IN
OUT
LEAK
standby
active
CASE
= 0°C to +85°C)
Commercial
Grade
—
—
750mA
850mA
850mA
Typical
V
CC
R4700 80 MHz
–0.5V
R4700 80 MHz
Min
3.5V
2.0V
—
—
—
—
—
—
- 0.1V
80/20 MHz
2
2
2
150mA
215mA
850 mA
1050mA
1250mA
Max
±10uA
0°C to +85°C (Case)
Max
V
15pF
15pF
20uA
0.1V
0.4V
0.8V
0.5V
Temperature
CC
—
—
2
2
2
2
a
+
—
—
875mA
975mA
975mA
Typical
R4700 100MHz
V
CC
R4700 100MHz
–0.5V
100/25MHz
Min
3.5V
2.0V
2
2
2
—
—
—
—
—
—
- 0.1V
1
13 of 25
175mA
250mA
1000mA
1200mA
1400mA
GND
Max
0V
±10uA
Max
V
2
2
15pF
15pF
20uA
0.1V
0.4V
0.8V
0.5V
2
2
4
CC
—
—
+
—
—
1175mA
1275mA
1275mA
Typical
RV4700
R4700 133MHz
3.3V±5%
V
V
133/33MHz
CC
CC
R4700 133MHz
–0.5V
Min
2
2
2
3.5V
2.0V
—
—
—
—
—
—
- 0.1V
1
225mA
325mA
1300mA
1500mA
1675mA
Max
2
2
2
2
4
±10uA
Max
V
15pF
15pF
20uA
R4700
5.0V±5%
0.8V
0.5V
0.1V
0.4V
CC
—
—
V
CC
+
C
C
C
No SysAd activity
C
R4x00 compatible writes
T
C
Pipelined writes or write
re-issue
T
C
C
L
L
L
L
L
= 0pF
= 50pF
= 0pF
= 50pF
= 50pF
= 25
= 25
Conditions
Conditions
0 ≤ V
o
o
|I
C
C
|I
Input/Output
3
OUT
OUT
Leakage
—
IN
|= 20uA
|= 4mA
—
—
—
—
December 5, 2008
≤ V
3
CC