DS1225Y-200+ Dallas Semiconductor, DS1225Y-200+ Datasheet - Page 3

• Manufacturer Part Number: DS1225Y-200+
• Description: SRAM, Nonvolatile, 2k x 8, 200 nS, DIP28
• Manufacturer: Dallas Semiconductor

Specifications of DS1225Y-200+

• Capacitance, Input: 10 pF
• Capacitance, Output: 10 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 75 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 64K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 2K×8
• Package Type: 720 EMOD
• Temperature, Operating: 0 to +70 °C
• Time, Access: 200 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

AC ELECTRICAL CHARACTERISTICS
CAPACITANCE
PARAMETER
Read Cycle Time
Access Time
Output Active
Output High Z from
Deselection
Output Hold from
AddressChange
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from WE
Output Active from WE
Data Setup Time
Data Hold Time
PARAMETER
Input Capacitance
Input/Output Capacitance
OE to Output Valid
CE to Output Valid
OE or CE to
SYMBOL
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
ODW
t
t
t
t
t
OEW
ACC
COE
WR1
WR2
t
DH1
DH2
WC
AW
C
OD
OH
WP
RC
OE
CO
DS
C
I/O
IN
DS1225Y-150
MIN
150
150
100
10
60
10
5
5
0
0
5
0
MIN
MAX
150
150
4 of 8
70
35
35
DS1225Y-170
MIN
170
170
120
(t
10
70
10
5
5
0
0
5
0
A
TYP
: See Note 10; V
MAX
170
170
80
35
35
DS1225Y-200
MIN
200
200
150
10
80
10
5
5
0
0
5
0
MAX
10
10
MAX
200
100
200
35
35
CC
UNITS
=5.0V ± 10%)
UNITS
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(T
A
= 25°C)
NOTES
NOTES
DS1225Y
12
13
12
13
5
5
3
5
5
4