ADM211EARUZ Analog Devices Inc, ADM211EARUZ Datasheet - Page 12

• Manufacturer Part Number: ADM211EARUZ
• Description: IC TXRX RS-232 5V 0.1UF 28-TSSOP
• Manufacturer: Analog Devices Inc
• Type: Transceiverr

Specifications of ADM211EARUZ

• Number Of Drivers/receivers: 4/5
• Protocol: RS232
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Package / Case: 28-TSSOP
• Device Type: Transceiver
• Ic Interface Type: RS232
• No. Of Drivers: 4
• Supply Voltage Range: 4.5V To 5.5V
• Driver Case Style: TSSOP
• No. Of Pins: 28
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
destruction can occur immediately because of arcing or heating.
Even if catastrophic failure does not occur immediately, the
device can suffer from parametric degradation that can result in
degraded performance. The cumulative effects of continuous
exposure can eventually lead to complete failure.
I/O lines are particularly vulnerable to ESD damage. Simply
touching or plugging in an I/O cable can result in a static
discharge that can damage or destroy the interface product
connected to the I/O port. Traditional ESD test methods, such
as the MIL-STD-883B method 3015.7, do not fully test product
susceptibility to this type of discharge. This test was intended to
test product susceptibility to ESD damage during handling.
Each pin is tested with respect to all other pins.
There are some important differences between the traditional
test and the IEC test:
•
•
•
It is possible that the ESD discharge could induce latch-up in
the device being tested. This test, therefore, is more represent-
tative of a real-world I/O discharge, where the equipment is
operating normally with power applied. However, both tests
should be performed to ensure maximum protection both
during handling and later during field service.
The IEC test is much more stringent in terms of discharge
energy. The peak current injected is over four times greater.
The current rise time is significantly faster in the IEC test.
The IEC test is carried out while power is applied to
the device.
36.8
100
90
10
GENERATOR
VOLTAGE
Figure 27. Human Body Model ESD Current Waveform
HIGH
t
RL
ESD TEST METHOD
H. BODY MIL-STD-883B
IEC 1000-4-2
Figure 26. ESD Test Standards
R1
t
DL
C1
1.5kΩ
330Ω
R2
R2
100pF
150pF
C1
TIME t
UNDER TEST
DEVICE
Rev. E | Page 12 of 20
ADM2xxE products are tested using both of the previously
mentioned test methods. Pins are tested with respect to all other
pins as per the MIL-STD-883B specification. In addition, all I/O
pins are tested per the IEC test specification. The products are
tested under the following conditions:
•
•
•
There are four levels of compliance defined by IEC 1000-4-2.
ADM2xxE products meet the most stringent compliance level
both for contact and for air-gap discharge. This means that the
products are able to withstand contact discharges in excess of
8 kV and air-gap discharges in excess of 15 kV.
Table 7. IEC 1000-4-2 Compliance Levels
Level
1
2
3
4
Table 8. ADM2xxE ESD Test Results
ESD Test Method
MIL-STD-883B
IEC 1000-4-2
EFT/BURST TESTING (IEC 1000-4-4)
IEC 1000-4-4 (previously IEC 801-4) covers EFT/burst
immunity. Electrical fast transients occur because of arcing
contacts in switches and relays. The tests simulate the
interference generated when, for example, a power relay
disconnects an inductive load. A spark is generated due to the
well-known back EMF effect. In fact, the spark consists of a
0.1ns TO 1ns
Contact
Air-Gap
Power on (normal operation).
Power on (shutdown mode).
Power off.
100
Contact Discharge (kV)
2
4
6
8
90
10
Figure 28. IEC 1000-4-2 ESD Current Waveform
30ns
60ns
Air-Gap Discharge (kV)
2
4
8
15
I/O Pin (kV)
±15
±8
±15
TIME t