2SK3528-01R Fuji Semiconductor, 2SK3528-01R Datasheet
2SK3528-01R
Manufacturer Part Number
2SK3528-01R
Description
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.29Ohm; ID +/-21A; TO-3PF; PD 160W; VGS +/-30V
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK3528-01R.pdf
(1 pages)
Specifications of 2SK3528-01R
Channel Type
N-Channel
Current, Drain
±21 A
Gate Charge, Total
54 nC
Package Type
TO-3PF
Polarization
N-Channel
Power Dissipation
160 W
Resistance, Drain To Source On
0.29 Ohm
Temperature, Operating, Maximum
+150 °C
Time, Turn-off Delay
78 ns
Time, Turn-on Delay
26 ns
Transconductance, Forward
20 S
Voltage, Breakdown, Drain To Source
600 V
Voltage, Forward, Diode
0.93 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3528-01R
Manufacturer:
SAMSUNG
Quantity:
1 000
2SK3528-01R
Super FAP-G Series
*1 L=1.4mH, Vcc=60V, See to Avalanche Energy Graph
*3 I
FUJI POWER MOSFET
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation Voltage
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
F
= <
-I
D
, -di/dt=50A/µs, Vcc BV
off
on
= <
DSS
c
, Tch 150°C
=25°C unless otherwise specified)
V
V
I
I
V
I
E
dV
dV/dt
P
T
T
V
D
D(puls]
AR
Symbol
ch
stg
DSX *5
AS
D
ISO *6
DS
GS
DS
R
R
Symbol
= <
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
f
I
r
rr
/dt
fs
GS(th)
DSS
(BR)DSS
DS(on)
iss
oss
rss
G
GS
SD
GD
rr
(on)
(off)
*1
*4
*2
*3
*4 VDS 600V
Absolute maximum ratings
Ratings
*2 Tch 150°C
-55 to +150
Test Conditions
<
Test Conditions
I
I
V
V
f=1MHz
V
V
R
V
I
V
L=1.4mH T
I
I
-di/dt=100A/µs
V
V
V
I
I
channel to ambient
=
channel to case
D
D
D
F
F
D
D
+150
DS
GS
CC
GS
GS
GS
DS
DS
GS
CC
=17A V
=17A V
= 250 µ A
= 250 µ A
=17A
=8.5A
=8.5A
600
600
±21
±84
±30
333.8
160
=300V I
=10
21
20
=600V V
=480V V
=25V
=0V
=10V
=10V
=±30V
=300V
5
3.125
2
= <
N-CHANNEL SILICON POWER MOSFET
*5 V
GS
GS
V
V
ch
V
GS
DS
=0V T
D
=25°C
=0V
DS
GS
GS
=8.5A
V
V
GS
=10V
=25V
DS
GS
=0V
=0V
=0V
T
=-30V *6 t=60sec f=60Hz
=V
=0V
ch
kV/µs
kV/µs
W
°C
°C
kVrms
mJ
V
V
A
A
V
A
ch
=25°C
Unit
GS
=25°C
T
T
ch
ch
=125°C
=25°C
TO-3PF
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
600
10
21
3.0
2280
Typ.
Typ.
290
10
20
16
26
37
78
13
54
15
20
10.0
0.29
0.93
0.7
Source(S)
Drain(D)
3420
Max.
250
100
435
40.0
Max.
117
25
24
39
56
19
81
23
30
0.781
5.0
0.37
1.50
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1
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