NTE98 NTE Electronics, Inc., NTE98 Datasheet
NTE98
Manufacturer Part Number
NTE98
Description
Transistor; TO-3; NPN; 500; 8 V; 20 A; 175 W; -65 to 200 degC; 1 degC/W; 0.25
Manufacturer
NTE Electronics, Inc.
Type
High Voltage, Powerr
Datasheet
1.NTE98.pdf
(3 pages)
Specifications of NTE98
Current, Collector Cutoff
0.25 mA
Current, Continuous Collector
20 A
Current, Gain
40
Current, Input
2.5 A
Current, Output
20 A
Device Dissipation
175 W
Gain, Dc Current, Maximum
400
Gain, Dc Current, Minimum
40
Package Type
TO-3
Polarity
NPN
Power Dissipation
175 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
1
Resistance, Thermal, Junction To Case
1 °C⁄W
Temperature Range, Junction, Operating
-65 to +200 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
500 V (Min.)
Voltage, Collector To Base
700 V
Voltage, Collector To Emitter
500 V
Voltage, Collector To Emitter, Saturation
3.5 V
Voltage, Emitter To Base
8 V
Voltage, Input
8 V
Voltage, Output
700 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTE98
Manufacturer:
TOKIN
Quantity:
2 100
Description:
The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage,
high–speed, power switching in inductive circuits where fall–time is critical. They are particularly
suited for line operated switch–mode applications.
Applications:
D Switching Regulators
D Inverters
D Solenoid and Relay Drivers
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Derate Above +25 C
B
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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EB
HV Darlington Power Amp, Switch
C
C
= +25 C), P
= +100 C), P
CEO(sus)
CEX(sus)
CEV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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stg
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Silicon NPN Transistor
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D
D
J
thJC
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NTE98
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10%.
L
. . . . . . . . . . . . . . . . . . . . . . .
–65 to +200 C
–65 to +200 C
1.0W/ C
1.0 C/W
+275 C
175W
100W
500V
500V
700V
2.5A
5.0A
20A
30A
8V
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NTE98 Summary of contents
Page 1
... HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly suited for line operated switch–mode applications. Applications: ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics (Note 2) Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 3) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Diode Forward Voltage Dynamic Characteristics Small–Signal Current Gain Output Capacitance ...
Page 3
B .135 (3.45) Max .350 (8.89) .312 (7.93) Min Emitter .215 (5.45) .430 (10.92) Base C E .875 (22.2) Dia Max .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .188 (4.8) R Max .525 (13.35) R Max ...