NTE98 NTE Electronics, Inc., NTE98 Datasheet - Page 2

• Manufacturer Part Number: NTE98
• Description: Transistor; TO-3; NPN; 500; 8 V; 20 A; 175 W; -65 to 200 degC; 1 degC/W; 0.25
• Manufacturer: NTE Electronics, Inc.
• Type: High Voltage, Powerr

Specifications of NTE98

• Current, Collector Cutoff: 0.25 mA
• Current, Continuous Collector: 20 A
• Current, Gain: 40
• Current, Input: 2.5 A
• Current, Output: 20 A
• Device Dissipation: 175 W
• Gain, Dc Current, Maximum: 400
• Gain, Dc Current, Minimum: 40
• Package Type: TO-3
• Polarity: NPN
• Power Dissipation: 175 W
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 1
• Resistance, Thermal, Junction To Case: 1 °C⁄W
• Temperature Range, Junction, Operating: -65 to +200 °C
• Transistor Polarity: NPN
• Voltage, Breakdown, Collector To Emitter: 500 V (Min.)
• Voltage, Collector To Base: 700 V
• Voltage, Collector To Emitter: 500 V
• Voltage, Collector To Emitter, Saturation: 3.5 V
• Voltage, Emitter To Base: 8 V
• Voltage, Input: 8 V
• Voltage, Output: 700 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Electrical Characteristics: (T
Note 2. Pulse test: Pulse Width = 300 s, Duty Cycle
Note 3. The internal Collector–Emitter diode can eliminate the need for an external diode to clamp
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 3)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Diode Forward Voltage
Dynamic Characteristics
Small–Signal Current Gain
Output Capacitance
Switching Characteristics (Resistive Load)
Delay Time
Rise Time
Storage Time
Fall Time
Switching Characteristics (Inductive Load, Clamped)
Storage Time
Crossover Time
Storage Time
Crossover Time
inductive loads. Tests have shown that the Forward Recovery Voltage (V
comparable to that of typical fast recovery rectifiers.
Parameter
C
V
V
Symbol
V
V
CEO(sus)
CEX(sus)
= +25 C unless otherwise specified)
I
I
CE(sat)
BE(sat)
I
h
C
CER
EBO
CEV
h
V
t
t
t
t
t
t
FE
t
t
sv
sv
fe
ob
d
s
c
c
r
f
F
I
I
I
V
V
V
V
V
V
I
I
I
I
I
I
V
V
V
V
I
I
I
I
C
C
C
C
C
C
C
C
F
C
B1
C
B1
CEV
CEV
CE
EB
CE
CE
CE
CB
CC
BE(off)
= 5A, Note 3
= 100mA, I
= 2A, V
= 5A, V
= 10A, I
= 10A, I
= 20A, I
= 10A, I
= 10A, I
= 10A Peak, V
= 10A Peak, V
= 500mA, V
= 500mA, V
= 700V, R
= 2V, I
= 5V, I
= 5V, I
= 10V, I
= 50V, I
= 250V, I
= 700V, V
= 700V, V
= 5V, t
clamp
clamp
B
B
B
B
B
C
C
C
= 500mA
= 500mA, T
= 2A
= 500mA
= 500mA, T
C
E
Test Conditions
= 0
= 5A
= 10A
B
C
BE
p
= 0, f
= 1A, f
BE(off)
BE(off)
= 0, V
= 500V, T
= 500V, T
BE(off)
BE(off)
= 10A, I
= 50 s, Duty Cycle
= 50 , T
clamp
clamp
test
2%.
test
= 5V, T
= 5V, T
clamp
= 1.5V
= 1.5V, T
= 250V,
= 250V,
= 100kHz
B1
C
C
= 1MHz
C
C
C
= +100 C
= +100 C
= 500mA,
= 500V
= +100 C
= +100 C
= +100 C
C
C
C
= +100 C
= +25 C
= +150 C
2%
Min
500
500
375
100
40
30
–
–
–
–
–
–
–
–
–
–
8
–
–
–
–
–
–
–
–
F
0.12 0.25
0.36
0.18
) of this diode is
Typ
0.5
0.8
0.2
1.5
0.8
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3
–
–
Max Unit
0.25
175
400
300
325
5.0
5.0
2.0
2.5
3.5
2.5
2.5
1.5
2.0
0.6
3.5
1.6
–
–
–
5
–
–
–
mA
mA
mA
mA
pF
V
V
V
V
V
V
V
V
V
s
s
s
s
s
s
s
s