FEP30DP-E3/45 General Semiconductor / Vishay, FEP30DP-E3/45 Datasheet - Page 3

• Manufacturer Part Number: FEP30DP-E3/45
• Description: Rectifier, Ultrafast; Dual, 30 A (Max.) @ 100C IFAV@Tcase; 300A Ifrm; 200V VRSM
• Manufacturer: General Semiconductor / Vishay

Specifications of FEP30DP-E3/45

• Capacitance, Junction: 175 pF
• Configuration: Dual Common Cathode
• Current, Forward: 30 A
• Current, Reverse: 500 μA
• Current, Surge: 300 A
• Package Type: TO-247AD (TO-3P)
• Primary Type: Rectifier
• Resistance, Thermal, Junction To Case: 1 °C/W
• Speed, Switching: Ultrafast
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -55 to +150 °C
• Time, Recovery: 35 ns
• Voltage, Forward: 0.95 V
• Voltage, Reverse: 200 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
0.01
100
0.1
10
0.1
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
0.2
0
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
T
J
0.4
= 125 °C
Instantaneous Forward Voltage (V)
50 - 200 V
300 - 600 V
20
0.6
40
0.8
T
J
= 25 °C
1.0
T
60
J
T
0.795 (20.2)
= 25 °C
0.820 (20.8)
0.775 (19.6)
0.840 (21.3)
J
= 100 °C
1.2
0.225 (5.7)
0.245 (6.2)
0.140 (3.5)
0.160 (4.1)
50 - 200 V
300 - 400 V
500 - 600 V
0.225 (5.7)
0.205 (5.2)
80
T
J
1.4
= 25 °C
1
0.645 (16.4)
0.625 (15.9)
100
1.6
2
TO-247AD (TO-3P)
3
PIN 1
PIN 3
0.323 (8.2)
0.313 (7.9)
0.048 (1.22)
0.044 (1.12)
0.142 (3.6)
0.138 (3.5)
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.117 (2.97)
0.170
(4.3)
PIN 2
CASE
10° TYP.
Both Sides
0.203 (5.16)
0.193 (4.90)
0.030 (0.76)
0.020 (0.51)
0.118 (3.0)
0.108 (2.7)
1000
30°
100
10
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
FEP30AP thru FEP30JP
0.078 (1.98) REF.
50 - 400 V
500 - 600 V
10
1° REF.
Both Sides
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
100
3