SKM 200 GB 123 D Sindopower / Semikron, SKM 200 GB 123 D Datasheet - Page 2

• Manufacturer Part Number: SKM 200 GB 123 D
• Description: IGBT; D-56; IGBT; 1200 V; 200 A; 1200 V; 20 V; 5.5 V (Typ.)
• Manufacturer: Sindopower / Semikron
• Type: Standardr

Specifications of SKM 200 GB 123 D

• Capacitance, Gate: 10 nF
• Current, Collector: 200 A
• Energy Rating: 41 mJ
• Fall Time: 70 ns
• Operating And Storage Temperature: –40 to +150 °C
• Package Type: D56
• Polarity: N-Channel
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.09 K/W
• Switching Loss: 24 mJ
• Time, Rise: 100 ns
• Transistor Type: IGBT
• Voltage, Breakdown, Collector To Emitter: 1200 V
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 2.5 V
• Voltage, Gate Threshold, Range: 5.5 V (Typ.)
• Voltage, Gate To Source: ±20 V
• Voltage, Saturation, Collector To Emitter: 1200 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

SKM 200GB123D
IGBT Modules
SKM 200GB123D
SKM 200GAL123D
SKM 200GAR123D
Features
Typical Applications
2
SEMITRANS
GB
GAL
®
3
GAR
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Characteristics
Symbol
Inverse Diode
Freewheeling Diode
Module
13-01-2009 NOS
Conditions
min.
typ.
© by SEMIKRON
max.
Units