SKM 200 GB 123 D Sindopower / Semikron, SKM 200 GB 123 D Datasheet - Page 3

• Manufacturer Part Number: SKM 200 GB 123 D
• Description: IGBT; D-56; IGBT; 1200 V; 200 A; 1200 V; 20 V; 5.5 V (Typ.)
• Manufacturer: Sindopower / Semikron
• Type: Standardr

Specifications of SKM 200 GB 123 D

• Capacitance, Gate: 10 nF
• Current, Collector: 200 A
• Energy Rating: 41 mJ
• Fall Time: 70 ns
• Operating And Storage Temperature: –40 to +150 °C
• Package Type: D56
• Polarity: N-Channel
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.09 K/W
• Switching Loss: 24 mJ
• Time, Rise: 100 ns
• Transistor Type: IGBT
• Voltage, Breakdown, Collector To Emitter: 1200 V
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 2.5 V
• Voltage, Gate Threshold, Range: 5.5 V (Typ.)
• Voltage, Gate To Source: ±20 V
• Voltage, Saturation, Collector To Emitter: 1200 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

SKM 200GB123D
IGBT Modules
SKM 200GB123D
SKM 200GAL123D
SKM 200GAR123D
Features
Typical Applications
3
SEMITRANS
GB
GAL
®
3
GAR
Z
Symbol
Z
Z
th
th(j-c)l
th(j-c)D
13-01-2009 NOS
Conditions
Values
© by SEMIKRON
Units