DS1220AB-200+ Dallas Semiconductor, DS1220AB-200+ Datasheet
DS1220AB-200+
Specifications of DS1220AB-200+
Related parts for DS1220AB-200+
DS1220AB-200+ Summary of contents
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... Optional industrial temperature range of -40°C to +85°C, designated IND DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors V occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption ...
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... IND parts +260°C for 10 seconds (Wave or Hand Solder Only) SYMBOL MIN TYP MAX UNITS V 4.75 5.0 5. 4.50 5 0.0 +0.8 IL =5V ± 5% for DS1220AB =5V ± 10% for DS1220AD SYMBOL MIN TYP MAX UNITS -1.0 I +1.0 IL -1 ...
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... DS1220AD-100 MIN MAX t 100 RC t 100 ACC 100 COE 100 WR1 t 10 WR2 35 t ODW 5 t OEW DH1 t 10 DH2 DS1220AB/AD (T See Note 10 =5.0V ± 5% for DS1220AB =5.0V ± 10% for DS1220AD) CC DS1220AB-120 DS1220AD-120 UNITS MIN MAX 120 ns 120 120 120 NOTES ...
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... Data Hold Time DS1220AB-150 SYMBOL DS1220AD-150 MIN MAX t 150 RC t 150 ACC 150 COE 150 WC t 100 WR1 t 10 WR2 35 t ODW 5 t OEW DH1 t 10 DH2 DS1220AB/AD DS1220AB-200 DS1220AD-200 UNITS NOTES MIN MAX 200 ns 200 ns 100 ns 200 200 ns 150 (cont’ ...
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... MIN t Inactive PD t 300 F t 300 REC SYMBOL MIN TYP MAX UNITS t DR during write cycle, the output buffers remain in a high-impedance state DS1220AB/ See Note 10) A TYP MAX UNITS μs 1.5 μs μ 125 years is measured from the latter NOTES 11 =25° ...
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... DS1220AB-120 0°C to +70°C DS1220AB-120+ 0°C to +70°C DS1220AB-150 0°C to +70°C DS1220AB-150+ 0°C to +70°C DS1220AB-200 0°C to +70°C DS1220AB-200+ 0°C to +70°C DS1220AB-200IND -40°C to +85°C DS1220AB-200IND+ -40°C to +85°C DS1220AD-100 0°C to +70°C DS1220AD-100+ 0°C to +70°C DS1220AD-100IND -40° ...