DS1220AB-200+ Dallas Semiconductor, DS1220AB-200+ Datasheet - Page 2

• Manufacturer Part Number: DS1220AB-200+
• Description: RAM NV 16K-5% VTP 200NS
• Manufacturer: Dallas Semiconductor

Specifications of DS1220AB-200+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 75 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 16K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 2K×8
• Package Type: 720 EMOD
• Temperature, Operating: 0 to +70 °C
• Time, Access: 200 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
Caution: Do Not Reflow
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
CAPACITANCE
DC ELECTRICAL CHARACTERISTICS
PARAMETER
DS1220AB Power Supply Voltage
DS1220AD Power Supply Voltage
Logic 1
Logic 0
PARAMETER
Input Leakage Current
I/O Leakage Current
Output Current @ 2.4V
Output Current @ 0.4V
Standby Current CE
Standby Current CE
Operating Current
(Commercial)
Operating Current
(Industrial)
Write Protection Voltage
(DS1220AB)
Write Protection Voltage
(DS1220AD)
PARAMETER
Input Capacitance
Input/Output Capacitance
CE ≥ V
IH
≤ V
CC
=
=
2.2V
V
CC
-0.5V
SYMBOL MIN TYP MAX UNITS
SYMBOL MIN TYP MAX UNITS
SYMBOL MIN TYP MAX UNITS
3 of 10
I
I
I
I
V
V
-0.3V to +6.0V
0°C to 70°C; -40°C to +85°C for IND parts
+260°C for 10 seconds
C
-40°C to +70°C; -40°C to +85°C for IND parts
(Wave or Hand Solder Only)
V
V
V
V
CCO1
C
I
I
CCS1
CCS2
CC01
I
I
OH
OL
IO
IL
CC
CC
I/O
TP
TP
IH
IN
IL
4.75
4.50
4.25
-1.0
-1.0
-1.0
2.2
0.0
2.0
4.5
(V
(V
CC
CC
4.62
4.37
5.0
5.0
5.0
3.0
=5V ± 10% for DS1220AD)
5
5
=5V ± 5% for DS1220AB)
5.25
5.50
+0.8
+1.0
+1.0
10.0
4.75
V
5.0
4.5
75
85
10
12
CC
(T
(T
A
A
: See Note 10)
: See Note 10)
mA
mA
mA
mA
mA
mA
μA
μA
pF
pF
V
V
V
V
V
V
(T
DS1220AB/AD
A
NOTES
NOTES
NOTES
=25°C)