IRFB18N50KPBF Vishay PCS, IRFB18N50KPBF Datasheet
IRFB18N50KPBF
Manufacturer Part Number
IRFB18N50KPBF
Description
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.26Ohm; ID 17A; TO-220AB; PD 220W; VGS +/-30V
Manufacturer
Vishay PCS
Datasheet
1.IRFB18N50KPBF.pdf
(3 pages)
Specifications of IRFB18N50KPBF
Current, Drain
17 A
Gate Charge, Total
120 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
220 W
Resistance, Drain To Source On
0.26 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
45 ns
Time, Turn-on Delay
22 ns
Transconductance, Forward
6.4 S
Voltage, Breakdown, Drain To Source
500 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB18N50KPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Applications
l
l
l
l
l
Benefits
l
l
l
l
Avalanche Characteristics
Thermal Resistance
Absolute Maximum Ratings
Symbol
R
R
R
I
I
I
P
V
dv/dt
T
T
Symbol
E
I
E
D
D
DM
AR
STG
D
GS
J
AS
AR
θJC
θCS
θJA
@ T
@ T
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency
Lead-Free
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage
and Current
Low R
@T
Circuits
C
C
C
= 25°C
= 100°C
= 25°C
DS(on)
Junction-to-Case†
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient†
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
(1.6mm from case )
Parameter
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
500V
IRFB18N50KPbF
DSS
Typ.
Typ.
0.50
–––
–––
–––
–––
–––
-55 to + 150
HEXFET Power MOSFET
Max.
220
± 30
300
1.8
7.8
17
11
68
10
R
DS(on)
0.26Ω
Max.
Max.
0.56
typ.
370
–––
58
17
22
TO-220AB
PD - 95472A
Units
W/°C
V/ns
°C
W
N
A
V
02/03/06
Units
Units
°C/W
17A
I
mJ
mJ
A
D
1
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IRFB18N50KPBF Summary of contents
Page 1
... Repetitive Avalanche Energy AR Thermal Resistance Symbol Parameter R Junction-to-Case† θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient† θJA SMPS MOSFET IRFB18N50KPbF HEXFET Power MOSFET V DSS 500V Max. @ 10V GS @ 10V GS - 150 Typ. ––– ––– ––– ...
Page 2
Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...
Page 3
TO-220AB packages are not recommended for Surface Mount Application. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. 8 ...