IRFB18N50KPBF Vishay PCS, IRFB18N50KPBF Datasheet - Page 2

• Manufacturer Part Number: IRFB18N50KPBF
• Description: MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.26Ohm; ID 17A; TO-220AB; PD 220W; VGS +/-30V
• Manufacturer: Vishay PCS

Specifications of IRFB18N50KPBF

• Current, Drain: 17 A
• Gate Charge, Total: 120 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 220 W
• Resistance, Drain To Source On: 0.26 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 45 ns
• Time, Turn-on Delay: 22 ns
• Transconductance, Forward: 6.4 S
• Voltage, Breakdown, Drain To Source: 500 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Diode Characteristics
Dynamic @ T

‚
ƒ
Static @ T
Notes:
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
Symbol
I
I
V
t
Q
t
I
Symbol
V
∆V
R
V
DSS
GSS
S
SM
rr
on
Symbol
d(on)
r
d(off)
f
fs
SD
(BR)DSS
GS(th)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
DS(on)
Repetitive rating; pulse width limited by
I
T
max. junction temperature.
(BR)DSS
Starting T
SD
I
AS
J
eff.
≤ 150°C
≤ 17A, di/dt ≤ 376A/µs, V
= 17A,
/∆T
J
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
= 25°C, L = 2.5mH, R
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
DD
≤ V
G
(BR)DSS
= 25Ω,
,
„
…
†
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
as C
oss
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
500
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
6.4
Min. Typ. Max. Units
3.0
–––
–––
–––
–––
–––
θ
Intrinsic turn-on time is negligible (turn-on is dominated by L
eff. is a fixed capacitance that gives the same charging time
oss
while V
2830 –––
3310 –––
0.59 –––
0.26 0.29
–––
–––
–––
–––
330
155
–––
–––
–––
520
–––
–––
–––
–––
–––
––– -100
5.3
38
22
60
45
30
93
DS
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
780
–––
250
100
1.5
8.0
5.0
34
54
17
50
68
is rising from 0 to 80% V
V/°C Reference to 25°C, I
nC
ns
µC
pF
ns
µA
µA
nA
V
S
Ω
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
V
V
V
V
V
V
D
D
J
J
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
GS
GS
DS
DS
DS
GS
GS
= 17A
= 17A
= 25°C, I
= 25°C, I
= 7.5Ω
= 50V, I
= 400V
= 10V, See Fig. 6 and 13 „
= 250V
= 10V,See Fig. 10
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
= 10V, I
= V
= 500V, V
= 400V, V
= 0V, I
= 30V
= -30V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
DSS
Conditions
= 250µA
= 17A, V
= 17A
Conditions
= 10A
= 10A
= 250µA
GS
GS
= 0V to 400V …
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
.
= 0V
= 0V, T
D
GS
= 1mA
„
„
= 0V „
J
G
= 125°C
S
+L
D
D
S
)
2