DS1225AB-150+ Dallas Semiconductor, DS1225AB-150+ Datasheet - Page 3

• Manufacturer Part Number: DS1225AB-150+
• Description: IC SRAM NV 64K 5% 150NS 28-DIP
• Manufacturer: Dallas Semiconductor

Specifications of DS1225AB-150+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 75 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 64K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 8K×8
• Package Type: 720 EMOD
• Temperature, Operating: 0 to +70 °C
• Time, Access: 150 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

AC ELECTRICAL CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
Output High Z from Deselection
Output Hold from Address
Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from WE
Output Active from WE
Data Setup Time
Data Hold Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
ODW
t
t
t
t
OEW
ACC
COE
WR1
WR2
t
DH1
DH2
WC
AW
OD
OH
WP
RC
OE
CO
DS
4 of 10
MIN
DS1225AB-70
DS1225AD-70
70
70
55
10
30
10
5
5
0
0
5
0
MAX
70
35
70
25
25
(V
(V
CC
DS1225AD-85
MIN
DS1225AB-85
85
85
65
10
35
10
CC
5
5
0
0
5
0
=5V ± 10% for DS1225AD)
=5V ± 5% for DS1225AB)
MAX
85
45
85
30
30
(T
UNITS
A
: See Note 10)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DS1225AB/AD
NOTES
12
13
12
13
5
5
3
5
5
4