DS1225AB-150+ Dallas Semiconductor, DS1225AB-150+ Datasheet - Page 5

• Manufacturer Part Number: DS1225AB-150+
• Description: IC SRAM NV 64K 5% 150NS 28-DIP
• Manufacturer: Dallas Semiconductor

Specifications of DS1225AB-150+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 75 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 64K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 8K×8
• Package Type: 720 EMOD
• Temperature, Operating: 0 to +70 °C
• Time, Access: 150 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

POWER-DOWN/POWER-UP CONDITION
SEE NOTE 11
POWER-DOWN/POWER-UP TIMING
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
PARAMETER
V
V
V
V
V
PARAMETER
Expected Data Retention Time
CC
CC
CC
CC
CC
Fail Detect to
slew from V
slew from 0V to V
Valid to
Valid to End of Write Protection
CE
TP
and
CE
to 0V
WE
and
TP
Inactive
WE
Inactive
SYMBOL
t
t
t
REC
t
t
PD
PU
SYMBOL MIN TYP MAX UNITS
R
F
7 of 10
t
DR
MIN
300
300
10
TYP
MAX
125
1.5
2
(T
A
UNITS
years
: See Note 10)
ms
ms
μs
μs
μs
(T
DS1225AB/AD
A
= 25°C)
NOTES
NOTES
9
11