NTE210 NTE Electronics, Inc., NTE210 Datasheet
NTE210
Manufacturer Part Number
NTE210
Description
Transistor; NPN; 75 V; 5 V; 1 A; 1.67 W; 20 degC/W; 100 nA (Max.); 120; 360
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Driverr
Datasheet
1.NTE210.pdf
(2 pages)
Specifications of NTE210
Bandwidth, Current Gain
375 MHz
Current, Collector
1 A
Current, Collector Cutoff
100 nA
Current, Gain
120 to 360
Frequency
75 to 375 MHz
Gain, Dc Current, Maximum
360
Gain, Dc Current, Minimum
120
Package Type
TO-202
Polarity
NPN
Power Dissipation
1.67 W
Primary Type
Si
Resistance, Thermal, Junction To Case
20 °C/W
Temperature, Operating, Maximum
150 °C
Temperature, Operating, Minimum
-55 °C
Transistor Type
NPN
Voltage, Breakdown, Collector To Emitter
75 V
Voltage, Collector To Emitter
75 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
1 V
Description:
The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack
age designed for general purpose, medium voltage, medium power amplifier and driver applications
such as series, shunt and switching regulators, and low and high frequency inverters and converters.
Features:
D TO202 Type Package: 2W Free Air Dissipation @ T
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” from case, 10sec), T
Maximum Thermal Resistance, Junction–to–Ambient, R
Maximum Thermal Resistance, Junction–to–Case, R
Note 1. Pulse Test: Pulse Width
Note 2. The actual power dissipation capability of the TO202 type package is 2W @ T
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/ C
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mW/ C
Parameter
C
Silicon Complementary Transistors
EBO
General Purpose Output & Driver
A
C
NTE210 (NPN) & NTE211 (PNP)
= +25 C, Note 2), P
= +25 C), P
CEO
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
= +25 C unless otherwise specified)
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to +150 C
Symbol
300 s.
(BR)CEO
I
I
CES
EBO
D
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W
I
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to +150 C
C
CE
EB
= 10mA, I
= 5V
= 90V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W
Test Conditions
thJC
B
= 0
A
thJA
= +25 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 C/W
. . . . . . . . . . . . . . . . . . . . . . . . . 75 C/W
L
. . . . . . . . . . . . . . . . . . . . . +260 C
Min
75
–
–
Typ
–
–
–
A
Max
100
100
–
= +25 C.
Unit
nA
nA
V
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NTE210 Summary of contents
Page 1
... General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack age designed for general purpose, medium voltage, medium power amplifier and driver applications such as series, shunt and switching regulators, and low and high frequency inverters and converters. ...
Page 2
... Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 3) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Dynamic Characteristics Current–Gain Bandwidth Product Collector–Base Capacitance NTE210 NTE211 Note 3. Pulse Test: Pulse Width .500 (12.7) 1.200 (30.48) Ref .300 (7.62) ...